{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363388844453853312.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/j.mattod.2014.04.026"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S1369702114001436?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S1369702114001436?httpAccept=text/plain"}}],"dc:title":[{"@value":"A brief review of atomic layer deposition: from fundamentals to applications"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383388844453853314","@type":"Researcher","foaf:name":[{"@value":"Richard W. Johnson"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388844453853312","@type":"Researcher","foaf:name":[{"@value":"Adam Hultqvist"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388844453853313","@type":"Researcher","foaf:name":[{"@value":"Stacey F. Bent"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"13697021"}],"prism:publicationName":[{"@value":"Materials Today"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2014-06","prism:volume":"17","prism:number":"5","prism:startingPage":"236","prism:endingPage":"246"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/","http://creativecommons.org/licenses/by-nc-nd/3.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S1369702114001436?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S1369702114001436?httpAccept=text/plain"}],"createdAt":"2014-05-10","modifiedAt":"2019-08-10","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360009142481990528","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhanced X-ray reflectivity from Pt-coated silicon micropore optics prepared by plasma atomic layer deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1360009142521119872","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"ZnO/SiO<sub>2</sub> core/shell nanowires for capturing CpG rich single-stranded DNAs"}]},{"@id":"https://cir.nii.ac.jp/crid/1360017279845021184","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Growth mechanism study of boron nitride atomic layer deposition by experiment and density functional theory"}]},{"@id":"https://cir.nii.ac.jp/crid/1360021390580411392","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Interfacial Molecular Compatibility for Programming Organic–Metal Oxide Superlattices"}]},{"@id":"https://cir.nii.ac.jp/crid/1360283694330256256","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Pt thermal atomic layer deposition for silicon x-ray micropore optics"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859602560","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Performance enhancement of the dual-metal gate In\n                    <sub>0.53</sub>\n                    Ga\n                    <sub>0.47</sub>\n                    As dopingless TFET by using a platinum metal strip insertion"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924867080960","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Investigations on the roles of position controlled Al layers incorporated into an Al-doped ZnO active channel during atomic layer deposition for thin film transistor applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1360298757455665920","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Influence of reflected waves at the bonded boundary in double-layered thickness-shear resonator using\n                    <i>α</i>\n                    -quartz"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567183088515968","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Reaction Stoichiometry and Mechanism of Pt Deposition via Surface Limited Redox Replacement of Copper UPD Layer on Au(111)"}]},{"@id":"https://cir.nii.ac.jp/crid/1360572092736719232","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Response characteristics of a highly sensitive gas sensor using a titanium oxide nanotube film decorated with platinum nanoparticles"}]},{"@id":"https://cir.nii.ac.jp/crid/1360580232377563008","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Radical-controlled plasma processes"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848655196583552","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"The future for plasma science and technology"}]},{"@id":"https://cir.nii.ac.jp/crid/1360865815679540864","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Development of calculation model for designing temperature characteristics of double-layered thickness-shear resonator"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/j.mattod.2014.04.026"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab3e5f_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.35848/1882-0786/aba7a5_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.1039/d0ay02138e_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.1016/j.commatsci.2022.111919_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.1021/acsami.3c04470_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.1364/ao.57.003237_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.03cc03_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.1021/acs.jpcc.8b02218_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/ac4a03_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.1016/j.snb.2020.128525_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.1007/s41614-022-00084-2_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.1002/ppap.201800118_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/ad1fb1_references_DOI_XjuDUpurrSasMkh39dNIhPYBNbq"}]}