{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363388844513944448.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1038/ncomms11983"}},{"identifier":{"@type":"URI","@value":"https://www.nature.com/articles/ncomms11983.pdf"}},{"identifier":{"@type":"URI","@value":"https://www.nature.com/articles/ncomms11983"}}],"dc:title":[{"@value":"Strain-engineered diffusive atomic switching in two-dimensional crystals"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>Abstract</jats:title><jats:p>Strain engineering is an emerging route for tuning the bandgap, carrier mobility, chemical reactivity and diffusivity of materials. Here we show how strain can be used to control atomic diffusion in van der Waals heterostructures of two-dimensional (2D) crystals. We use strain to increase the diffusivity of Ge and Te atoms that are confined to 5 Å thick 2D planes within an Sb<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub>–GeTe van der Waals superlattice. The number of quintuple Sb<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub>2D crystal layers dictates the strain in the GeTe layers and consequently its diffusive atomic disordering. By identifying four critical rules for the superlattice configuration we lay the foundation for a generalizable approach to the design of switchable van der Waals heterostructures. As Sb<jats:sub>2</jats:sub>Te<jats:sub>3</jats:sub>–GeTe is a topological insulator, we envision these rules enabling methods to control spin and topological properties of materials in reversible and energy efficient ways.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383388844513944580","@type":"Researcher","foaf:name":[{"@value":"Janne Kalikka"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388844513944579","@type":"Researcher","foaf:name":[{"@value":"Xilin Zhou"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388844513944576","@type":"Researcher","foaf:name":[{"@value":"Eric Dilcher"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388844513944577","@type":"Researcher","foaf:name":[{"@value":"Simon Wall"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388844513944578","@type":"Researcher","foaf:name":[{"@value":"Ju Li"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388844513944581","@type":"Researcher","foaf:name":[{"@value":"Robert E. Simpson"}]}],"publication":{"publicationIdentifier":[{"@type":"EISSN","@value":"20411723"}],"prism:publicationName":[{"@value":"Nature Communications"}],"dc:publisher":[{"@value":"Springer Science and Business Media LLC"}],"prism:publicationDate":"2016-06-22","prism:volume":"7","prism:number":"1","prism:startingPage":"11983"},"reviewed":"false","dc:rights":["https://creativecommons.org/licenses/by/4.0","https://creativecommons.org/licenses/by/4.0"],"url":[{"@id":"https://www.nature.com/articles/ncomms11983.pdf"},{"@id":"https://www.nature.com/articles/ncomms11983"}],"createdAt":"2016-06-22","modifiedAt":"2025-06-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360283691877401728","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Resistive switching mechanism of GeTe–Sb<sub>2</sub>Te<sub>3</sub> interfacial phase change memory and topological properties of embedded two-dimensional states"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859802624","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Re-amorphization of GeSbTe alloys not through a melt-quenching process"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924860359808","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"MoSbTe for high-speed and high-thermal-stability phase-change memory applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565166567482240","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Manipulating the Bulk Band Structure of Artificially Constructed van der Waals Chalcogenide Heterostructures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565166570173312","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Atomic Reconfiguration of van der Waals Gaps as the Key to Switching in GeTe/Sb<sub>2</sub>Te<sub>3</sub> Superlattices"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565171313025152","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"First principles investigation of the unipolar resistive switching mechanism in an interfacial phase change memory based on a GeTe/Sb<sub>2</sub>Te<sub>3</sub>superlattice"}]},{"@id":"https://cir.nii.ac.jp/crid/1360846642775066752","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Strain engineering of atomic and electronic structures of few-monolayer-thick GaN"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874813506688","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High-speed and large-window C-doped Sb-rich GeSbTe alloy for phase-change memory applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848658076603648","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Topological Phase Buried in a Chalcogenide Superlattice Monitored by Helicity-Dependent Kerr Measurement"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1038/ncomms11983"},{"@type":"CROSSREF","@value":"10.7567/1882-0786/ab5312_references_DOI_OTDdMCUKKym8WgZILQuBiR2OuE3"},{"@type":"CROSSREF","@value":"10.1021/acsomega.7b00812_references_DOI_OTDdMCUKKym8WgZILQuBiR2OuE3"},{"@type":"CROSSREF","@value":"10.1039/c7nr03495d_references_DOI_OTDdMCUKKym8WgZILQuBiR2OuE3"},{"@type":"CROSSREF","@value":"10.7567/1882-0786/aaed9d_references_DOI_OTDdMCUKKym8WgZILQuBiR2OuE3"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.04fe08_references_DOI_OTDdMCUKKym8WgZILQuBiR2OuE3"},{"@type":"CROSSREF","@value":"10.1021/acsami.8b07974_references_DOI_OTDdMCUKKym8WgZILQuBiR2OuE3"},{"@type":"CROSSREF","@value":"10.1103/physrevmaterials.1.024003_references_DOI_OTDdMCUKKym8WgZILQuBiR2OuE3"},{"@type":"CROSSREF","@value":"10.7567/apex.11.041401_references_DOI_OTDdMCUKKym8WgZILQuBiR2OuE3"},{"@type":"CROSSREF","@value":"10.1021/acsami.7b04450_references_DOI_OTDdMCUKKym8WgZILQuBiR2OuE3"}]}