{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363388845204010368.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/j.jallcom.2015.04.131"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0925838815011469?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0925838815011469?httpAccept=text/plain"}}],"dc:title":[{"@value":"Electronic structure analysis of GaN films grown on r- and a-plane sapphire"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383388845204010370","@type":"Researcher","foaf:name":[{"@value":"Monu Mishra"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845204010496","@type":"Researcher","foaf:name":[{"@value":"Shibin Krishna TC"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845204010371","@type":"Researcher","foaf:name":[{"@value":"Neha Aggarwal"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845204010369","@type":"Researcher","foaf:name":[{"@value":"Saket Vihari"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845204010368","@type":"Researcher","foaf:name":[{"@value":"Govind Gupta"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"09258388"}],"prism:publicationName":[{"@value":"Journal of Alloys and Compounds"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2015-10","prism:volume":"645","prism:startingPage":"230","prism:endingPage":"234"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0925838815011469?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0925838815011469?httpAccept=text/plain"}],"createdAt":"2015-05-07","modifiedAt":"2018-09-22","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449882851456","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Lattice-matched GaN(0002)/LSAT(111) hetero-structures grown by PLD and analyzed by first-principles calculations"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/j.jallcom.2015.04.131"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab354c_references_DOI_TvmhJWqblxxvqLF1K3DfNt3pcMh"}]}