{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363388845359185280.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1111/j.1151-2916.1992.tb04433.x"}},{"identifier":{"@type":"URI","@value":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1111%2Fj.1151-2916.1992.tb04433.x"}},{"identifier":{"@type":"URI","@value":"https://ceramics.onlinelibrary.wiley.com/doi/pdf/10.1111/j.1151-2916.1992.tb04433.x"}}],"dc:title":[{"@value":"Thermally Induced Failure of Copper‐Bonded Alumina Substrates for Electronic Packaging"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Although copper‐bonded alumina substrate has been used for some power electronic devices, its use has been rather limited because of lack of information on the thermally induced failure of the substrate. The phenomenology of thermal cracking was experimentally studied in this work. Interface debonding occurred at the side edge of copper chips and grew inwardly along the interface. Subsequently, the interface crack deviated into the alumina after propagating up to approximately 200 μm. The curving of the interface crack was caused by a mixed Mode I and Mode II loading near the edge. The cracking was widespread, whereby small cracks coalesced with one another to form a long, shallow crack along the perimeter of the copper chips. The cracking sensitivity was influenced by such design factors as edge sharpness, nickel plating, and copper backing. Annealing the substrate above 700 K before testing promoted the cracking considerably. The substrate cracking is discussed in terms of stress conditions near the edge.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383388845359185280","@type":"Researcher","foaf:name":[{"@value":"Yuichi Yoshino"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845359185281","@type":"Researcher","foaf:name":[{"@value":"Hidehiko Ohtsu"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845359185282","@type":"Researcher","foaf:name":[{"@value":"Takashi Shibata"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00027820"},{"@type":"EISSN","@value":"15512916"}],"prism:publicationName":[{"@value":"Journal of the American Ceramic Society"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"1992-12","prism:volume":"75","prism:number":"12","prism:startingPage":"3353","prism:endingPage":"3357"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1111%2Fj.1151-2916.1992.tb04433.x"},{"@id":"https://ceramics.onlinelibrary.wiley.com/doi/pdf/10.1111/j.1151-2916.1992.tb04433.x"}],"createdAt":"2005-03-08","modifiedAt":"2025-11-02","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360847874812623488","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Thermal shock reliability of a GaN die-attach module on DBA substrate with Ti/Ag metallization by using micron/submicron Ag sinter paste"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1111/j.1151-2916.1992.tb04433.x"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0278_references_DOI_B0AC6G4kMYplNCAR0fvojShpxY1"}]}