{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363388845929478016.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.3587227"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3587227/10434965/113701_1_online.pdf"}}],"dc:title":[{"@value":"Electronic and chemical properties of the c-Si/Al2O3 interface"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Using aluminum oxide (Al2O3) films deposited by atomic layer deposition (ALD), the dominant passivation mechanisms at the c-Si/Al2O3 interface, as well as the chemical composition of the interface region, are investigated. The excellent surface passivation quality of thin Al2O3 films is predominantly assigned to a high negative fixed charge density of Qf = − (4 ± 1) × 1012 cm−2, which is located within 1nm of the Si/Al2O3 interface and is independent of the layer thickness. A deterioration of the passivation quality for ultrathin Al2O3 layers is explained by a strong increase in the interface state density, presumably due to an incomplete reaction of the trimethyl-aluminum (TMA) molecules during the first ALD cycles. A high oxygen-to-aluminum atomic ratio resulting from the incomplete adsorption of the TMA molecules is suggested as a possible source of the high negative charge density Qf at the Si/Al2O3 interface.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383388845929478021","@type":"Researcher","foaf:name":[{"@value":"Florian Werner"}],"jpcoar:affiliationName":[{"@value":"Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845929478020","@type":"Researcher","foaf:name":[{"@value":"Boris Veith"}],"jpcoar:affiliationName":[{"@value":"Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845929478016","@type":"Researcher","foaf:name":[{"@value":"Dimitri Zielke"}],"jpcoar:affiliationName":[{"@value":"Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845929478017","@type":"Researcher","foaf:name":[{"@value":"Lisa Kühnemund"}],"jpcoar:affiliationName":[{"@value":"Institute for Solid State Physics, Leibniz University Hannover 2 , Appelstr. 2, 30167 Hannover, Germany"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845929478023","@type":"Researcher","foaf:name":[{"@value":"Christoph Tegenkamp"}],"jpcoar:affiliationName":[{"@value":"Institute for Solid State Physics, Leibniz University Hannover 2 , Appelstr. 2, 30167 Hannover, Germany"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845929478022","@type":"Researcher","foaf:name":[{"@value":"Michael Seibt"}],"jpcoar:affiliationName":[{"@value":"Georg-August University Göttingen 3 IV. Physical Institute, , Friedrich-Hund-Platz 1, 37077 Göttingen, Germany"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845929478019","@type":"Researcher","foaf:name":[{"@value":"Rolf Brendel"}],"jpcoar:affiliationName":[{"@value":"Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany"},{"@value":"Institute for Solid State Physics, Leibniz University Hannover 2 , Appelstr. 2, 30167 Hannover, Germany"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388845929478018","@type":"Researcher","foaf:name":[{"@value":"Jan Schmidt"}],"jpcoar:affiliationName":[{"@value":"Institute for Solar Energy Research Hamelin (ISFH) 1 , Am Ohrberg 1, 31860 Emmerthal, Germany"},{"@value":"Institute for Solid State Physics, Leibniz University Hannover 2 , Appelstr. 2, 30167 Hannover, Germany"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00218979"},{"@type":"EISSN","@value":"10897550"}],"prism:publicationName":[{"@value":"Journal of Applied Physics"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2011-06-01","prism:volume":"109","prism:number":"11","prism:startingPage":"113701"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3587227/10434965/113701_1_online.pdf"}],"createdAt":"2011-06-03","modifiedAt":"2023-07-21","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003446857247488","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Excellent Passivation of p<sup>+</sup> Silicon Surfaces by Inline Plasma Enhanced Chemical Vapor Deposited SiO<sub>x</sub>/AlO<sub>x</sub> Stacks"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449882973312","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of post-deposition annealing on electrical properties and structures of aluminum oxide passivation film on a crystalline silicon substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449885996544","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Excellent Passivation of p<sup>+</sup>Silicon Surfaces by Inline Plasma Enhanced Chemical Vapor Deposited SiO<sub><i>x</i></sub>/AlO<sub><i>x</i></sub>Stacks"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449891256960","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Surface passivation investigation on ultra-thin atomic layer deposited aluminum oxide layers for their potential application to form tunnel layer passivated contacts"}]},{"@id":"https://cir.nii.ac.jp/crid/1360025430657712256","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Symmetric Dopant‐Free Si Solar Cells Enabled by TiO<sub>x</sub> Nanolayers: An In‐Depth Study on Bipolar Carrier Selectivity"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399836465408","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Initial growth analysis of ALD Al\n                    <sub>2</sub>\n                    O\n                    <sub>3</sub>\n                    film on hydrogen-terminated Si substrate via in situ XPS"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399843005824","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of surface pretreatment in the thermal atomic layer deposition of Al<sub>2</sub>O<sub>3</sub>for passivation of crystal Si solar cells"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204377783424","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Evaluation of Spin-Coated Alumina Passivation Layer for Point-Contacted Rear Electrode Passivation of Silicon Solar Cells"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.3587227"},{"@type":"CROSSREF","@value":"10.7567/jjap.51.10na17_references_DOI_TqckDtXWzt0Fo3Zfn7wtbf1NX33"},{"@type":"CROSSREF","@value":"10.7567/jjap.53.08lc04_references_DOI_TqckDtXWzt0Fo3Zfn7wtbf1NX33"},{"@type":"CROSSREF","@value":"10.1002/advs.202410179_references_DOI_TqckDtXWzt0Fo3Zfn7wtbf1NX33"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab50ec_references_DOI_TqckDtXWzt0Fo3Zfn7wtbf1NX33"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab6273_references_DOI_TqckDtXWzt0Fo3Zfn7wtbf1NX33"},{"@type":"CROSSREF","@value":"10.1143/jjap.51.10na17_references_DOI_TqckDtXWzt0Fo3Zfn7wtbf1NX33"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.08mb14_references_DOI_TqckDtXWzt0Fo3Zfn7wtbf1NX33"},{"@type":"CROSSREF","@value":"10.1587/transele.e100.c.101_references_DOI_TqckDtXWzt0Fo3Zfn7wtbf1NX33"}]}