{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363388846150413696.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/s0022-0248(01)00899-5"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0022024801008995?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0022024801008995?httpAccept=text/plain"}}],"dc:title":[{"@value":"Ferromagnet (MnAs)/semiconductor (GaAs, AlAs, InAs)/ferromagnet (MnAs) trilayer heterostructures:"}],"description":[{"notation":[{"@value":"Abstract   We have successfully grown ferromagnetic-metal (MnAs)/III–V semiconductor (GaAs, AlAs, InAs)/ferromagnetic-metal (MnAs) trilayer heterostructures on GaAs(1 1 1)B substrates by molecular beam epitaxy. In magnetoresistance (MR) measurements in current-in-plane (CIP) geometry, the spin valve effect was clearly observed, which was caused by the change of the magnetization of the two ferromagnetic MnAs layers between parallel and antiparallel directions. All the trilayer structures showed peculiar temperature dependence of the MR, which is very different from the conventional all-metallic magnetic multilayers. The MR ratio was found to be larger with decreasing the thickness and decreasing the energy band gap of the semiconductor spacer layer."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383388846150413696","@type":"Researcher","foaf:name":[{"@value":"M Tanaka"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388846150413697","@type":"Researcher","foaf:name":[{"@value":"K Takahashi"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00220248"}],"prism:publicationName":[{"@value":"Journal of Crystal Growth"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2001-07","prism:volume":"227-228","prism:startingPage":"847","prism:endingPage":"851"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0022024801008995?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0022024801008995?httpAccept=text/plain"}],"createdAt":"2002-10-14","modifiedAt":"2022-06-23","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360005519345761408","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"The transport properties of InAs nanowires: an introduction to MnAs/InAs heterojunction nanowires for spintronics"}]},{"@id":"https://cir.nii.ac.jp/crid/1360021390760564992","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Low-temperature grown MnAs/InAs/MnAs double heterostructure on GaAs (111)B by molecular beam epitaxy"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/s0022-0248(01)00899-5"},{"@type":"OPENAIRE","@value":"doi_dedup___::19d40b232761e637043436d81602fd5e"},{"@type":"CROSSREF","@value":"10.1088/1361-6463/ab88e8_references_DOI_Hnk9ToCEgOih9iyZJ9Pg0JO87NJ"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/ad01c5_references_DOI_Hnk9ToCEgOih9iyZJ9Pg0JO87NJ"}]}