{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363388846201698560.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1002/pssb.200642556"}},{"identifier":{"@type":"URI","@value":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssb.200642556"}},{"identifier":{"@type":"URI","@value":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.200642556"}}],"dc:title":[{"@value":"Isostructural BaSi<sub>2</sub>, BaGe<sub>2</sub> and SrGe<sub>2</sub>: electronic and optical properties"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>Abstract</jats:title><jats:p>We have performed a theoretical study of the electronic band structure, density of states, dielectric function and absorption coefficient of isostructural BaSi<jats:sub>2</jats:sub>, BaGe<jats:sub>2</jats:sub> and SrGe<jats:sub>2</jats:sub> compounds by means of different <jats:italic>ab initio</jats:italic> methods. All materials are found to be indirect band‐gap semiconductors displaying almost equal dispersion of bands close to the gap region. The energy gaps of 0.83, 0.57 and 0.44 eV are estimated for BaSi<jats:sub>2</jats:sub>, BaGe<jats:sub>2</jats:sub> and SrGe<jats:sub>2</jats:sub>, respectively. Analysis of the absorption coefficient of BaSi<jats:sub>2</jats:sub> in comparison with data for other semiconducting silicides indicates its prospects for a solar cell application. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383388846201698562","@type":"Researcher","foaf:name":[{"@value":"D. B. Migas"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388846201698560","@type":"Researcher","foaf:name":[{"@value":"V. L. Shaposhnikov"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388846201698561","@type":"Researcher","foaf:name":[{"@value":"V. E. Borisenko"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"03701972"},{"@type":"EISSN","@value":"15213951"}],"prism:publicationName":[{"@value":"physica status solidi (b)"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"2007-06-19","prism:volume":"244","prism:number":"7","prism:startingPage":"2611","prism:endingPage":"2618"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1002%2Fpssb.200642556"},{"@id":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.200642556"}],"createdAt":"2007-03-21","modifiedAt":"2023-10-17","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050001202542061440","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells"},{"@value":"Improved photoresponsivity of semiconducting BaSi<sub>2</sub> epitaxial films           grown on a tunnel junction for thin-film solar cells"}]},{"@id":"https://cir.nii.ac.jp/crid/1050001202549930880","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Operation of BaSi2 homojunction solar cells on p+-Si(111) substrates and the effect of structure parameters on their performance"},{"@value":"Operation of BaSi<sub>2</sub> homojunction solar cells on p<sup>+</sup>-Si(111) substrates and the effect of structure parameters on their performance"}]},{"@id":"https://cir.nii.ac.jp/crid/1050001202554416896","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar 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heterojunction solar cells on Si(100) with conversion efficiency approaching 10%: comparison with Si(111)"},{"@value":"p-BaSi2/n-Si heterojunction solar cell on Si(001) with conversion efficiency approaching 10%: comparison with Si(111)"}]},{"@id":"https://cir.nii.ac.jp/crid/1050001202620409344","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate"},{"@value":"Reduction in interface defect density in p-BaSi<sub>2</sub>/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1050001202634874880","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Effect of BaSi2 template growth duration on the generation of defects and 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epitaxy on carrier concentration and spectral response of BaSi2 epitaxial films"}]},{"@id":"https://cir.nii.ac.jp/crid/1050282677617814144","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Decrease in electrical contact resistance of Sb-doped n+-BaSi2 layers and spectral response of an Sb-doped n+-BaSi2/undoped BaSi2 structure for solar cells"},{"@value":"Decrease in electrical contact resistance of Sb-doped n<sup>+</sup>-BaSi<sub>2</sub>layers and spectral response of an Sb-doped n<sup>+</sup>-BaSi<sub>2</sub>/undoped BaSi<sub>2</sub>structure for solar cells"}]},{"@id":"https://cir.nii.ac.jp/crid/1050282677617913600","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2 a potential light absorber for solar 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BaSi<sub>2</sub> continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi<sub>2</sub>/n-Ge heterojunction solar cells"}]},{"@id":"https://cir.nii.ac.jp/crid/1050283688737904512","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation"},{"@value":"Investigation of defect levels in BaSi<sub>2</sub> epitaxial films by photoluminescence and the effect of atomic hydrogen passivation"}]},{"@id":"https://cir.nii.ac.jp/crid/1050285299949677440","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Influence of Ba-to-Si deposition rate ratios on the electrical and optical properties of B-doped BaSi2 epitaxial films"},{"@value":"Influence of Ba-to-Si deposition rate ratios on the electrical and optical properties of B-doped BaSi\n                    <sub>2</sub>\n                    epitaxial films"}]},{"@id":"https://cir.nii.ac.jp/crid/1050285299949680000","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Effects of boron and hydrogen doping on the enhancement of photoresponsivity and photoluminescence of BaSi2 epitaxial films"},{"@value":"Effects of boron and hydrogen doping on the enhancement of photoresponsivity and photoluminescence of BaSi\n                    <sub>2</sub>\n                    epitaxial films"}]},{"@id":"https://cir.nii.ac.jp/crid/1050289951136599936","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Hydrogen states in hydrogen-passivated semiconducting barium disilicide measured via muon spin 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mathvariant=\"normal\">i</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>\n passivated with atomic hydrogen"}]},{"@id":"https://cir.nii.ac.jp/crid/1050566774904672512","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Significant enhancement of photoresponsivity in As-doped n-BaSi2 epitaxial films by atomic hydrogen passivation"},{"@value":"Significant enhancement of photoresponsivity in As-doped n-BaSi<sub>2</sub>epitaxial films by atomic hydrogen passivation"}]},{"@id":"https://cir.nii.ac.jp/crid/1050566774926386816","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Fabrication of As-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy"},{"@value":"Fabrication of As-doped n-type BaSi\n                    <sub>2</sub>\n                    epitaxial films grown by molecular beam epitaxy"},{"@value":"Fabrication of As-doped n-type BaSi2 epitaxial films by molecular beam epitaxy"}]},{"@id":"https://cir.nii.ac.jp/crid/1050566774926388864","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Drastic enhancement of photoresponsivity in C-doped BaSi2 films formed by radio-frequency sputtering"},{"@value":"Drastic enhancement of photoresponsivity in C-doped BaSi\n                    <sub>2</sub>\n                    films formed by radio-frequency sputtering"},{"@value":"Drastic enhancement of photoresponsivity in C-doped BaSi2 films formed by radio-frequency sputteirng"}]},{"@id":"https://cir.nii.ac.jp/crid/1050845764128142208","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Simple way of finding Ba to Si deposition rate ratios for high photoresponsivity in BaSi2 films by Raman 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