{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363388846352891776.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/j.mee.2010.10.013"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0167931710003734?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0167931710003734?httpAccept=text/plain"}}],"dc:title":[{"@value":"Diffusion and doping issues in germanium"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383388846352891776","@type":"Researcher","foaf:name":[{"@value":"H. Bracht"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388846352891777","@type":"Researcher","foaf:name":[{"@value":"S. Schneider"}]},{"@id":"https://cir.nii.ac.jp/crid/1383388846352891778","@type":"Researcher","foaf:name":[{"@value":"R. Kube"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"01679317"}],"prism:publicationName":[{"@value":"Microelectronic Engineering"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"2011-04","prism:volume":"88","prism:number":"4","prism:startingPage":"452","prism:endingPage":"457"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0167931710003734?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0167931710003734?httpAccept=text/plain"}],"createdAt":"2010-10-11","modifiedAt":"2018-12-07","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360004236312195584","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Systematic Density Functional Theory Investigation of Stability of Dopant Atoms in Ge Ultra-Thin Film Grown on Si Substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1360846643577253248","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Review—Properties of Intrinsic Point Defects in Si and Ge Assessed by Density Functional Theory"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/j.mee.2010.10.013"},{"@type":"CROSSREF","@value":"10.1149/2.0191704jss_references_DOI_2JA9C10oNI67kgJufycI51mr0R9"},{"@type":"CROSSREF","@value":"10.1149/2.0251604jss_references_DOI_2JA9C10oNI67kgJufycI51mr0R9"}]}