{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670318603708288.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.119305"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/70/1/57/18524033/57_1_online.pdf"}}],"dc:title":[{"@value":"Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to <b>\n                     <i>n</i>\n                  </b>-type GaN"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We report on a study of Al and Ti/Al contacts to n-type GaN. Al contacts on n-GaN (7×1017 cm−3) annealed in forming gas at 600 °C reached a minimum contact resistivity of 8×10−6 Ω cm2 and had much better thermal stability than reported by previous researchers. Ti/Al (35/115 nm) contacts on n-GaN (5×1017 cm−3) had resistivities of 7×10−6 and 5×10−6 Ω cm2 after annealing in Ar at 400 °C for 5 min and 600 °C for 15 s, respectively. Depth profiles of Ti/Al contacts annealed at 400 °C showed that low contact resistance was only achieved after Al diffused to the GaN interface. We propose that the mechanism for Ohmic contact formation in Ti/Al contacts annealed in the 400–600 °C range includes Ti reducing the GaN native oxide and an Al–Ti intermetallic coming into intimate contact with the GaN.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670318603708292","@type":"Researcher","foaf:name":[{"@value":"B. P. Luther"}],"jpcoar:affiliationName":[{"@value":"Department of Electrical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670318603708288","@type":"Researcher","foaf:name":[{"@value":"S. E. Mohney"}],"jpcoar:affiliationName":[{"@value":"Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670318603708291","@type":"Researcher","foaf:name":[{"@value":"T. N. Jackson"}],"jpcoar:affiliationName":[{"@value":"Electronic Materials and Processing Research Laboratory, The Pennsylvania State University, University Park, Pennsylvania 16802"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670318603708290","@type":"Researcher","foaf:name":[{"@value":"M. Asif Khan"}],"jpcoar:affiliationName":[{"@value":"APA Optics, Incorporated, Blaine, Minnesota 55449"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670318603708289","@type":"Researcher","foaf:name":[{"@value":"Q. Chen"}],"jpcoar:affiliationName":[{"@value":"APA Optics, Incorporated, Blaine, Minnesota 55449"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670318603708293","@type":"Researcher","foaf:name":[{"@value":"J. W. Yang"}],"jpcoar:affiliationName":[{"@value":"APA Optics, Incorporated, Blaine, Minnesota 55449"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"1997-01-06","prism:volume":"70","prism:number":"1","prism:startingPage":"57","prism:endingPage":"59"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/70/1/57/18524033/57_1_online.pdf"}],"createdAt":"2002-07-26","modifiedAt":"2024-02-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050564289060585728","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Scalable water splitting on particulate photocatalyst sheets with a solar-to-hydrogen energy conversion efficiency exceeding 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