{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670318980509696.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.4913832"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4913832/13289660/112806_1_online.pdf"}}],"dc:title":[{"@value":"Defect state passivation at III-V oxide interfaces for complementary metal–oxide–semiconductor devices"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>The paper describes the reasons for the greater difficulty in the passivation of interface defects of III–V semiconductors like GaAs. These include the more complex reconstructions of the starting surface which already possess defect configurations, the possibility of injecting As antisites into the substrate which give rise to gap states, and the need to avoid As-As bonds and As dangling bonds which give rise to gap states. The nature of likely defect configurations in terms of their electronic structure is described. The benefits of diffusion barriers and surface nitridation are discussed.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670318980509696","@type":"Researcher","foaf:name":[{"@value":"J. Robertson"}],"jpcoar:affiliationName":[{"@value":"Cambridge University Department of Engineering, , Cambridge CB2 1PZ, United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670318980509697","@type":"Researcher","foaf:name":[{"@value":"Y. Guo"}],"jpcoar:affiliationName":[{"@value":"Cambridge University Department of Engineering, , Cambridge CB2 1PZ, United Kingdom"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670318980509698","@type":"Researcher","foaf:name":[{"@value":"L. Lin"}],"jpcoar:affiliationName":[{"@value":"Cambridge University Department of Engineering, , Cambridge CB2 1PZ, United Kingdom"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00218979"},{"@type":"EISSN","@value":"10897550"}],"prism:publicationName":[{"@value":"Journal of Applied Physics"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2015-03-16","prism:volume":"117","prism:number":"11"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.4913832/13289660/112806_1_online.pdf"}],"createdAt":"2015-03-16","modifiedAt":"2023-06-24","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449882996608","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Optimization of atomic layer deposition temperature of ZrO<sub>2</sub> protective coat for GaInAsP photonic crystal nanolaser sensor"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004235313932160","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Pretreatment Effects on High-k/In<sub>x</sub>Ga<sub>1–x</sub>As MOS Interface Properties and Their Physical Model"}]},{"@id":"https://cir.nii.ac.jp/crid/1360283692792534528","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion"}]},{"@id":"https://cir.nii.ac.jp/crid/1390866415322058880","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"A 9.3% PAE, 9.2-dBm <i>P</i><sub>OUT</sub> power amplifier and -1.9-dB <i>G</i><sub>c</sub> upconverting mixer using InP-based MOS HEMTs for 300-GHz phased-array transmitters"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.4913832"},{"@type":"CROSSREF","@value":"10.1103/physrevb.92.075306_references_DOI_8eoJkAGRuUdrreZQuZeLnxxEVQt"},{"@type":"CROSSREF","@value":"10.1587/elex.22.20240699_references_DOI_8eoJkAGRuUdrreZQuZeLnxxEVQt"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab5635_references_DOI_8eoJkAGRuUdrreZQuZeLnxxEVQt"},{"@type":"CROSSREF","@value":"10.1109/jeds.2017.2760344_references_DOI_8eoJkAGRuUdrreZQuZeLnxxEVQt"}]}