著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Matthew T. Hardy and Brian P. Downey and David J. Meyer and Neeraj Nepal and David F. Storm and D. Scott Katzer,Epitaxial ScAlN Etch-Stop Layers Grown by Molecular Beam Epitaxy for Selective Etching of AlN and GaN,IEEE Transactions on Semiconductor Manufacturing,0894-6507,Institute of Electrical and Electronics Engineers (IEEE),2017-11,30,4,475-479,https://cir.nii.ac.jp/crid/1363670319065618176,https://doi.org/10.1109/tsm.2017.2749201