{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670319127812480.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.364074"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/jap/article-pdf/81/1/417/18689639/417_1_online.pdf"}}],"dc:title":[{"@value":"Biaxial strain dependence of exciton resonance energies in wurtzite GaN"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We have systematically studied the strain dependence of the free-exciton resonance energies in wurtzite GaN by photoreflectance measurements using well-characterized samples. The experimental data have been analyzed using the appropriate Hamiltonian for the valence bands in wurtzite GaN and determined the values of the crystal field splitting, the spin–orbit splitting, the shear deformation potential constants, and the energy gap in the unstrained crystal. Discussions are given on the strain dependence of the energy gaps, of the effective masses, and of the binding energies for the free-exciton ground states as well as on the valence-band parameters.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670319127812484","@type":"Researcher","foaf:name":[{"@value":"Amane Shikanai"}],"jpcoar:affiliationName":[{"@value":"Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319127812486","@type":"Researcher","foaf:name":[{"@value":"Takashi Azuhata"}],"jpcoar:affiliationName":[{"@value":"Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319127812480","@type":"Researcher","foaf:name":[{"@value":"Takayuki Sota"}],"jpcoar:affiliationName":[{"@value":"Department of Electrical, Electronics, and Computer Engineering, Waseda University, 3-4-1 Ohkubo, Shinjuku, Tokyo 169, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319127812485","@type":"Researcher","foaf:name":[{"@value":"Shigefusa Chichibu"}],"jpcoar:affiliationName":[{"@value":"Faculty of Science and Technology, Science University of Tokyo, 2641 Yamazaki, Noda, Chiba 278, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319127812481","@type":"Researcher","foaf:name":[{"@value":"Akito Kuramata"}],"jpcoar:affiliationName":[{"@value":"Optical Semiconductor Devices Laboratory, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319127812483","@type":"Researcher","foaf:name":[{"@value":"Kazuhiko Horino"}],"jpcoar:affiliationName":[{"@value":"Optical Semiconductor Devices Laboratory, Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi, Kanagawa 243-01, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319127812482","@type":"Researcher","foaf:name":[{"@value":"Shuji Nakamura"}],"jpcoar:affiliationName":[{"@value":"Department of Research and Development, Nichia Chemical Industries Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00218979"},{"@type":"EISSN","@value":"10897550"}],"prism:publicationName":[{"@value":"Journal of Applied Physics"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"1997-01-01","prism:volume":"81","prism:number":"1","prism:startingPage":"417","prism:endingPage":"424"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/jap/article-pdf/81/1/417/18689639/417_1_online.pdf"}],"createdAt":"2002-07-26","modifiedAt":"2024-02-02","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050025031481195776","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Valence-band-ordering of a strain-free bulk ZnO single crystal identified by four-wave-mixing spectroscopy technique"}]},{"@id":"https://cir.nii.ac.jp/crid/1050282676671369984","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"All deformation potentials in GaN determined by reflectance spectroscopy under uniaxial stress: Definite breakdown of the quasicubic approximation"}]},{"@id":"https://cir.nii.ac.jp/crid/1050282677276778752","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Near-field evidence of local polarized emission centers in InGaN/GaN materials"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449882508032","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Thermionic emission of carriers in InGaN/(In)GaN multiple quantum wells"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449887614080","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Exciton–Exciton Interactions in Tensile-Strained GaN"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004233908333312","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Local carrier dynamics around the sub-surface basal-plane stacking faults of GaN studied by spatio-time-resolved cathodoluminescence using a front-excitation-type photoelectron-gun"}]},{"@id":"https://cir.nii.ac.jp/crid/1360009142731807360","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Long-range electron-hole exchange interaction in aluminum nitride"}]},{"@id":"https://cir.nii.ac.jp/crid/1360283696335618304","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Snap-shot optical polarization spectroscopy using radially polarized pulses"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921833020288","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Determination of Exciton Binding Energy of GaInNAs Quantum Well Structures by Piezoelectric Photothermal Spectroscopy Compared with Photoreflectance Measurements"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859277440","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Precise determination of polarization fields in c-plane GaN/Al<sub> <i>x</i> </sub>Ga<sub>1-<i>x</i> </sub>N/GaN heterostructures with capacitance–voltage-measurements"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565167046650752","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Intrinsic exciton transitions in GaN"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399843210752","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Investigation of valence-band splitting in InN by low-temperature photoreflectance spectroscopy"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399844647808","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Partially polycrystalline GaN<sub>1−</sub><i><sub>x</sub></i>As<i><sub>x</sub></i>alloys grown on GaAs in the middle composition range achieving a smaller band gap"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871782938240","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681224728320","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Exciton Spectra of Cubic and Hexagonal GaN Epitaxial Films."},{"@language":"ja-Kana","@value":"Exciton Spectra of Cubic and Hexagonal"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681246934272","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Band-Gap Energy and Effective Mass of BGaN"}]},{"@id":"https://cir.nii.ac.jp/crid/1521699230084188288","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Time-resolved photoluminescence of a two-dimensional electron gas in an Al0.2Ga0.8N/GaN heterostructure fabricated on ammonothermal GaN substrates"},{"@language":"ja-Kana","@value":"Time resolved photoluminescence of a two dimensional electron gas in an Al0 2Ga0 8N GaN heterostructure fabricated on ammonothermal GaN substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1522262179976351488","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Optical Properties of Highly Strained AlN Coherently Grown on 6H-SiC(0001)"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.364074"},{"@type":"OPENAIRE","@value":"doi_dedup___::9a220b1bdd1dca98e6785f8bb8ef88c6"},{"@type":"CROSSREF","@value":"10.1103/physrevb.81.155202_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.08jl03_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab09dd_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1103/physrevb.102.155202_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1063/1.4817297_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1063/1.3265732_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0404_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.081202_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1063/1.366660_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1063/1.4711103_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1143/apex.4.045501_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1143/jjap.50.06gh09_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.7567/apex.6.062604_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.7567/apex.9.122401_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.7567/jjap.50.06gh09_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1143/jjap.36.1976_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1143/jjap.45.l904_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.7567/jjap.54.031001_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"},{"@type":"CROSSREF","@value":"10.1143/jjap.39.2389_references_DOI_a1fEBLPQUvyydYpwTBhoS757gbz"}]}