{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670319176532992.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.4028/www.scientific.net/msf.527-529.119"}},{"identifier":{"@type":"URI","@value":"https://www.scientific.net/MSF.527-529.119.pdf"}},{"identifier":{"@type":"DOI","@value":"10.4028/0-87849-425-1.119"}}],"dc:title":[{"@value":"Solution Growth of SiC Crystal with High Growth Rate Using Accelerated Crucible Rotation Technique"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We performed solution growth of SiC single crystals from Si-Ti-C ternary solution using\nthe accelerated crucible rotation technique (ACRT). It was confirmed that the growth rate exceeding\n200 μm/hr was achievable by several ACRT conditions. This high growth rate might be due to the\nenhancement of the carbon transport from the graphite crucible to the growth interface using the\nACRT. Moreover, the incorporation of inclusions of the Si-Ti solvent in the grown crystal was\nsignificantly suppressed by using the ACRT. It was thought that the intensive convection near the\ngrowth interface resulted in not only the marked increase of SiC growth rate but also the superior\nhomogeneity in the surface morphology. It was concluded that faster stable growth can be\naccomplished in the SiC solution growth using the ACRT.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670319176532994","@type":"Researcher","foaf:name":[{"@value":"Kazuhiko Kusunoki"}],"jpcoar:affiliationName":[{"@value":"Sumitomo Metal Industries Ltd."}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319176532993","@type":"Researcher","foaf:name":[{"@value":"Kazuhito Kamei"}],"jpcoar:affiliationName":[{"@value":"Sumitomo Metal Industries Ltd."}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319176532865","@type":"Researcher","foaf:name":[{"@value":"Nobuhiro Okada"}],"jpcoar:affiliationName":[{"@value":"Sumitomo Metal Industries Ltd."}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319176532867","@type":"Researcher","foaf:name":[{"@value":"Nobuyoshi Yashiro"}],"jpcoar:affiliationName":[{"@value":"Sumitomo Metal Industries Ltd."}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319176532992","@type":"Researcher","foaf:name":[{"@value":"Akihiro Yauchi"}],"jpcoar:affiliationName":[{"@value":"Sumitomo Metal Industries Ltd."}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319176532866","@type":"Researcher","foaf:name":[{"@value":"Toru Ujihara"}],"jpcoar:affiliationName":[{"@value":"Nagoya University"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319176532864","@type":"Researcher","foaf:name":[{"@value":"Kazuo Nakajima"}],"jpcoar:affiliationName":[{"@value":"Tohoku University"}]}],"publication":{"publicationIdentifier":[{"@type":"EISSN","@value":"16629752"}],"prism:publicationName":[{"@value":"Materials Science Forum"}],"dc:publisher":[{"@value":"Trans Tech Publications, Ltd."}],"prism:publicationDate":"2006-10-15","prism:volume":"527-529","prism:startingPage":"119","prism:endingPage":"122"},"reviewed":"false","dc:rights":["https://www.scientific.net/PolicyAndEthics/PublishingPolicies","https://www.scientific.net/license/TDM_Licenser.pdf"],"url":[{"@id":"https://www.scientific.net/MSF.527-529.119.pdf"}],"createdAt":"2009-03-11","modifiedAt":"2025-02-24","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360004232262453888","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Formation process of 3C-SiC on 6H-SiC (0001) by low-temperature solution growth in Si–Sc–C system"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004232262617472","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Nitrogen doping of 4H–SiC by the top-seeded solution growth technique using Si–Ti solvent"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924861271296","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Solubility and diffusion of chromium in 4H-SiC"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285707239179648","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Polytype-selective growth of SiC by supersaturation control in solution growth"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285707239206016","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Numerical analysis of the velocity of SiC growth by the top seeding method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285708154581760","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Polytype Transformation by Replication of Stacking Faults Formed by Two-Dimensional Nucleation on Spiral Steps during SiC Solution Growth"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617536027264","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Availability of Cr-rich Cr-Si solvent for rapid solution growth of 4H-SiC"}]},{"@id":"https://cir.nii.ac.jp/crid/1360576197673950976","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Application of C-face dislocation conversion to 2 inch SiC crystal growth on an off-axis seed crystal"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871785546112","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Solution Growth of Silicon Carbide Using Fe–Si Solvent"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848658839604736","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Real-time observation of the interface between SiC and a liquid alloy and its application to the dissolution behavior of SiC at 1573 K"}]},{"@id":"https://cir.nii.ac.jp/crid/1360861707354770688","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Suppressing solvent compositional change during solution growth of SiC using SiC/C gradient crucible"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001204607858304","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Recent Development on the Production Technology of Silicon Carbide Wafers"},{"@language":"ja","@value":"ＳｉＣウェハ製造に関する最近の動向"},{"@language":"ja-Kana","@value":"SiC ウェハ セイゾウ ニ カンスル サイキン ノ ドウコウ"}]},{"@id":"https://cir.nii.ac.jp/crid/1390002184875811840","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Molecular Dynamics Study of the Effect of Carbon Atoms on the Surface Tension of Silicon–carbon Alloy"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.4028/www.scientific.net/msf.527-529.119"},{"@type":"OPENAIRE","@value":"doi_dedup___::ab2b46df83683131c0735985dcde7c3d"},{"@type":"CROSSREF","@value":"10.7567/apex.9.061301_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1021/cg300360h_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2014.01.044_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2020.125877_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1143/jjap.49.051302_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2011.11.041_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1541/ieejeiss.130.917_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2012.03.036_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1063/1.4837575_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2011.09.004_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1016/j.jcrysgro.2021.126382_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.1039/c9ce01338e_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"},{"@type":"CROSSREF","@value":"10.2355/isijinternational.isijint-2019-308_references_DOI_nTKSZo7GrssCzYH0QFIEf5jTRA"}]}