{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670319210677888.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.1371003"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/jap/article-pdf/89/12/7809/19256401/7809_1_online.pdf"}},{"identifier":{"@type":"NAID","@value":"30015863747"}}],"dc:title":[{"@value":"Diffusivity measurements of silicon in silicon dioxide layers using isotopically pure material"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We report measurement of the silicon diffusion coefficient in silicon dioxide films using isotopically enriched Si28 silicon dioxide layers that enable relatively low Si30 concentration measurements to be performed using secondary ion mass spectrometry. Two types of experiments are made. Si30 atoms are introduced in excess in a stoichiometric isotopically pure silicon dioxide layer either by ion implantation or by a predeposition technique. These experiments are representative of any physical situation in which excess silicon atoms are introduced into silicon dioxide layers during silicon processing. The estimated diffusivity values are significantly higher than previously reported values for Si diffusion within a stoichiometric oxide and closer to reported values for excess Si diffusion within an oxide. The activation energy of the diffusivity is found to be 4.74 eV.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1583950398799638144","@type":"Researcher","foaf:name":[{"@value":"D. Tsoukalas"}],"jpcoar:affiliationName":[{"@value":"Institute of Microelectronics, NCSR “Demokritos,” 15310 Aghia Paraskevi, Greece"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319210677890","@type":"Researcher","foaf:name":[{"@value":"C. Tsamis"}],"jpcoar:affiliationName":[{"@value":"Institute of Microelectronics, NCSR “Demokritos,” 15310 Aghia Paraskevi, Greece"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319210677888","@type":"Researcher","foaf:name":[{"@value":"P. Normand"}],"jpcoar:affiliationName":[{"@value":"Institute of Microelectronics, NCSR “Demokritos,” 15310 Aghia Paraskevi, Greece"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00218979"},{"@type":"EISSN","@value":"10897550"},{"@type":"NCID","@value":"AA00693547"}],"prism:publicationName":[{"@value":"Journal of Applied Physics"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2001-06-15","prism:volume":"89","prism:number":"12","prism:startingPage":"7809","prism:endingPage":"7813"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/jap/article-pdf/89/12/7809/19256401/7809_1_online.pdf"}],"createdAt":"2002-07-26","modifiedAt":"2024-02-07","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360284924868429824","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Oxygen concentration dependence of silicon oxide dynamical properties"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396809476352","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Universal Model for Local Anodic Oxidation Based on Surface Chemistry of Oxide Islands"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874813059072","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"First-principles study of pressure and SiO-incorporation effect on dynamical properties of silicon oxide"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848656907896960","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Microscopic observation of lateral diffusion at Si–SiO2 interface by photoelectron emission microscopy using synchrotron radiation"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206265496832","@type":"Article","relationType":["isCitedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Effect of Si/SiO2 Interface on Silicon and Boron Diffusion in Thermally Grown SiO2"},{"@value":"Effect of Si/SiO<sub>2</sub>Interface on Silicon and Boron Diffusion in Thermally Grown SiO<sub>2</sub>"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282679351824512","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Current-Voltage Hysteresis Characteristics in MOS Capacitors with Si-Implanted Oxide"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681240345216","@type":"Article","relationType":["isCitedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO2"},{"@language":"ja-Kana","@value":"Effect of Partial Pressure of Oxygen on Self Diffusion of Si in SiO2"},{"@value":"The Effect of Partial Pressure of Oxygen on Self-Diffusion of Si in SiO<sub>2</sub>"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681436008704","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Effect of the Si/SiO2 Interface on Diffusion in SiO2"},{"@language":"ja","@value":"「ゲート絶縁膜／Ｓｉ界面の評価」ＳｉＯ２中の拡散に与えるＳｉ／ＳｉＯ２界面の影響"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009409190518144","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Universal model for local anodic oxidation based on surface chemistry of oxide islands"},{"@language":"ja-Kana","@value":"Universal model for local anodic oxidation based on surface chemistry of oxide islands"}]},{"@id":"https://cir.nii.ac.jp/crid/1520291856029912192","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isCitedBy"],"jpcoar:relatedTitle":[{"@value":"SiO2中の拡散に与えるSi/SiO2界面の影響"},{"@language":"ja-Kana","@value":"SiO2 チュウ ノ カクサン ニ アタエル Si SiO2 カイメン ノ エイキョウ"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.1371003"},{"@type":"CIA","@value":"30015863747"},{"@type":"CROSSREF","@value":"10.1143/jjap.50.035202_references_DOI_Toy3r0PeSkGfn8nGzO4BhMG8swF"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.06kd01_references_DOI_Toy3r0PeSkGfn8nGzO4BhMG8swF"},{"@type":"CROSSREF","@value":"10.1587/transele.e92.c.1523_references_DOI_Toy3r0PeSkGfn8nGzO4BhMG8swF"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab4977_references_DOI_Toy3r0PeSkGfn8nGzO4BhMG8swF"},{"@type":"CROSSREF","@value":"10.1380/jsssj.26.249_references_DOI_Toy3r0PeSkGfn8nGzO4BhMG8swF"},{"@type":"CROSSREF","@value":"10.7567/jjap.50.035202_references_DOI_Toy3r0PeSkGfn8nGzO4BhMG8swF"},{"@type":"CROSSREF","@value":"10.1016/j.apsusc.2011.04.047_references_DOI_Toy3r0PeSkGfn8nGzO4BhMG8swF"}]}