{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670319261567232.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1021/nl504258m"}},{"identifier":{"@type":"URI","@value":"https://pubs.acs.org/doi/pdf/10.1021/nl504258m"}}],"dc:title":[{"@value":"van der Waals Epitaxial Ultrathin Two-Dimensional Nonlayered Semiconductor for Highly Efficient Flexible Optoelectronic Devices"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670319261567233","@type":"Researcher","foaf:name":[{"@value":"Qisheng Wang"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319261567239","@type":"Researcher","foaf:name":[{"@value":"Kai Xu"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319261567236","@type":"Researcher","foaf:name":[{"@value":"Zhenxing Wang"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319261567238","@type":"Researcher","foaf:name":[{"@value":"Feng Wang"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319261567105","@type":"Researcher","foaf:name":[{"@value":"Yun Huang"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319261567104","@type":"Researcher","foaf:name":[{"@value":"Muhammad Safdar"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319261567237","@type":"Researcher","foaf:name":[{"@value":"Xueying Zhan"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319261567232","@type":"Researcher","foaf:name":[{"@value":"Fengmei Wang"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319261567234","@type":"Researcher","foaf:name":[{"@value":"Zhongzhou Cheng"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319261567235","@type":"Researcher","foaf:name":[{"@value":"Jun He"}],"jpcoar:affiliationName":[{"@value":"National Center for Nanoscience and Technology, Beijing 100190, China"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"15306984"},{"@type":"EISSN","@value":"15306992"}],"prism:publicationName":[{"@value":"Nano Letters"}],"dc:publisher":[{"@value":"American Chemical Society (ACS)"}],"prism:publicationDate":"2015-01-23","prism:volume":"15","prism:number":"2","prism:startingPage":"1183","prism:endingPage":"1189"},"reviewed":"false","url":[{"@id":"https://pubs.acs.org/doi/pdf/10.1021/nl504258m"}],"createdAt":"2015-01-20","modifiedAt":"2023-04-22","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449883183744","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Epitaxial growth of non-layered PbSe nanoplates on MoS<sub>2</sub> monolayer for infrared photoresponse"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874813272192","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Stress engineering on the electronic and spintronic properties for a GaSe/HfSe<sub>2</sub> van der Waals heterostructure"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1021/nl504258m"},{"@type":"CROSSREF","@value":"10.7567/1882-0786/ab10e5_references_DOI_Jqroslg0szbAlV8lq9DE6nvx2uf"},{"@type":"CROSSREF","@value":"10.7567/1882-0786/ab0247_references_DOI_Jqroslg0szbAlV8lq9DE6nvx2uf"}]}