{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670319285337472.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1166/jnn.2010.2803"}},{"identifier":{"@type":"PMID","@value":"21137906"}}],"dc:title":[{"@value":"Fabrication of Single-Electron Transistors Using Field-Emission-Induced Electromigration"}],"description":[{"notation":[{"@value":"We report a novel technique for the fabrication of planar-type Ni-based single-electron transistors (SETs) using electromigration method induced by field emission current. The method is so-called \"activation\" and is demonstrated using arrow-shaped Ni nanogap electrodes with initial gap separations of 21-68 nm. Using the activation method, we are easily able to obtain the SETs by Fowler-Nordheim (F-N) field emission current passing through the nanogap electrodes. The F-N field emission current plays an important role in triggering the migration of Ni atoms. The nanogap is narrowed because of the transfer of Ni atoms from source to drain electrode. In the activation procedure, we defined the magnitude of a preset current Is and monitored the current I between the nanogap electrodes by applying voltage V. When the current I reached a preset current Is, we stopped the voltage V. As a result, the tunnel resistance of the nanogaps was decreased from the order of 100 T(omega) to 100 k(omega) with increasing the preset current Is from 1 nA to 150 microA. Especially, the devices formed by the activation with the preset current from 100 nA to 1.5 microA exhibited Coulomb blockade phenomena at room temperature. Coulomb blockade voltage of the devices was clearly modulated by the gate voltage quasi-periodically, resulting in the formation of multiple tunnel junctions of the SETs at room temperature. By increasing the preset current from 100 nA to 1.5 microA in the activation scheme, the charging energy of the SETs at room temperature was decreased, ranging from 1030 meV to 320 meV. Therefore, it is found that the charging energy and the number of islands of the SETs are controllable by the preset current during the activation. These results clearly imply that the activation procedure allows us to easily and simply fabricate planar-type Ni-based SETs operating at room temperature."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670319285337474","@type":"Researcher","foaf:name":[{"@value":"Watari Kume"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319285337472","@type":"Researcher","foaf:name":[{"@value":"Yusuke Tomoda"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319285337473","@type":"Researcher","foaf:name":[{"@value":"Michinobu Hanada"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319285337475","@type":"Researcher","foaf:name":[{"@value":"Jun-Ichi Shirakashi"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"15334880"}],"prism:publicationName":[{"@value":"Journal of Nanoscience and Nanotechnology"}],"dc:publisher":[{"@value":"American Scientific Publishers"}],"prism:publicationDate":"2010-11-01","prism:volume":"10","prism:number":"11","prism:startingPage":"7239","prism:endingPage":"7243"},"reviewed":"false","createdAt":"2010-10-09","modifiedAt":"2011-04-04","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360004235133255424","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Field-emission-induced electromigration method for precise tuning of electrical properties of Ni-based single-electron transistors"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921834064128","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Stability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285708901174272","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Fabrication of single-electron transistors with electromigrated Ni nanogaps"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285710109960960","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Structural tuning of nanogaps using field-emission-induced electromigration with bipolar biasing"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285710846517504","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High-throughput nanogap formation by field-emission-induced electromigration"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567185086676480","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Tuning of channel conductance of au nanowires using ultrafast electromigration controlled by a field-programmable gate array"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567185301087104","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Electrical properties of nanogap-based single-electron transistors fabricated by field-emission-induced electromigration"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848658844914304","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Structural tuning of nanogaps using electromigration induced by field emission current with bipolar biasing"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848658844923136","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Simultaneous fabrication of nanogap electrodes using field-emission-induced electromigration"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848658855410560","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Simultaneous arrayed formation of single-electron transistors using electromigration in series-connected nanogaps"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848660063382400","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Simultaneous fabrication of nanogaps using field-emission-induced electromigration"}]},{"@id":"https://cir.nii.ac.jp/crid/1360848660277819520","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"A fully customized hardware system for ultra-fast feedback-controlled electromigration using FPGA"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009409218374016","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Stability Diagrams of Single-Common-Gate Double-Dot Single-Electron Transistors with Arbitrary Junction and Gate Capacitances"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1166/jnn.2010.2803"},{"@type":"OPENAIRE","@value":"doi_dedup___::3892e96cca343cc249b65a75f6e9d860"},{"@type":"CROSSREF","@value":"10.1109/3m-nano.2015.7425485_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1063/1.5031822_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1109/nano.2014.6968058_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1109/3m-nano.2014.7057331_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1109/3m-nano.2014.7057332_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1143/jjap.51.124301_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1109/3m-nano.2015.7425487_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1109/nano.2013.6720862_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1063/1.4923347_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1063/1.4923411_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1063/1.5043449_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.7567/jjap.51.124301_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"},{"@type":"CROSSREF","@value":"10.1116/1.4927443_references_DOI_HPGuDZW9Hk2EXFrR2yFIRlCNLS8"}]}