{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670319356809856.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.3129562"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3129562/15041488/103104_1_online.pdf"}}],"dc:title":[{"@value":"Interfacial misfit array formation for GaSb growth on GaAs"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>The manuscript reports that the initial strain relaxation of highly mismatched GaSb layers grown on GaAs (001) is governed by the two-dimensional (2D), periodic interfacial misfit (IMF) dislocation array growth mode. Under optimized growth conditions, only pure 90° dislocations are generated along both [110] and [11¯0] directions that are located at GaSb/GaAs interface, which leads to very low threading dislocation density propagated along the growth direction. The long-range uniformity and subsequent strain relaxation of the 2D and periodic IMF array are demonstrated via transmission electron microscopy and scanning transmission electron microscopy images at GaSb/GaAs interface.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670319356809856","@type":"Researcher","foaf:name":[{"@value":"Shenghong Huang"}],"jpcoar:affiliationName":[{"@value":"University of New Mexico 1 Department of Earth and Planetary Sciences, , Albuquerque, New Mexico 87131, USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319356809858","@type":"Researcher","foaf:name":[{"@value":"Ganesh Balakrishnan"}],"jpcoar:affiliationName":[{"@value":"University of New Mexico 2 Center for High Technology Materials, , Albuquerque, New Mexico 87106, USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319356809857","@type":"Researcher","foaf:name":[{"@value":"Diana L. Huffaker"}],"jpcoar:affiliationName":[{"@value":"University of California 3 Department of Electrical Engineering and California Nano Systems Institute, , Los Angeles, California 90095, USA"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00218979"},{"@type":"EISSN","@value":"10897550"}],"prism:publicationName":[{"@value":"Journal of Applied Physics"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2009-05-15","prism:volume":"105","prism:number":"10"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/jap/article-pdf/doi/10.1063/1.3129562/15041488/103104_1_online.pdf"}],"createdAt":"2009-05-22","modifiedAt":"2023-07-29","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050582154146354176","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874813795072","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Entirely relaxed lattice-mismatched GaSb/GaAs/Si(001) heterostructure grown via metalorganic chemical vapor deposition"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.3129562"},{"@type":"CROSSREF","@value":"10.7567/apex.11.051202_references_DOI_2njPE8GelXnZ9NJFaWmIfbOIB6s"},{"@type":"CROSSREF","@value":"10.35848/1347-4065/ad2032_references_DOI_2njPE8GelXnZ9NJFaWmIfbOIB6s"}]}