著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Anne S. Verhulst and Bart Sorée and Daniele Leonelli and William G. Vandenberghe and Guido Groeseneken,"Modeling the single-gate, double-gate, and gate-all-around tunnel field-effect transistor",Journal of Applied Physics,0021-8979,AIP Publishing,2010-01-15,107,2,024518,https://cir.nii.ac.jp/crid/1363670319650402944,https://doi.org/10.1063/1.3277044