{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670319738979072.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.3441409"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3441409/13413152/212505_1_online.pdf"}}],"dc:title":[{"@value":"Tunnel magnetoresistance with improved bias voltage dependence in lattice-matched Fe/spinel MgAl2O4/Fe(001) junctions"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We fabricated fully epitaxial Fe/MgAl2O4/Fe(001) magnetic tunnel junctions using plasma oxidation of an Mg/Al bilayer. The MgAl2O4 showed a (001)-oriented spinel-type structure, and there were few misfit dislocations at the interfaces between the MgAl2O4 and the two Fe layers due to a small lattice mismatch (∼1%). Tunnel magnetoresistance (TMR) ratios up to 117% (165%) were obtained at room temperature (15 K). The bias voltage for one-half of the zero-bias TMR ratio (Vhalf) was relatively large, ranging from 1.0 to 1.3 V at room temperature, which is attributed to the small misfit dislocation density.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670319738979078","@type":"Researcher","foaf:name":[{"@value":"Hiroaki Sukegawa"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319738979079","@type":"Researcher","foaf:name":[{"@value":"Huixin Xiu"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319738979073","@type":"Researcher","foaf:name":[{"@value":"Tadakatsu Ohkubo"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319738979076","@type":"Researcher","foaf:name":[{"@value":"Takao Furubayashi"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319738978944","@type":"Researcher","foaf:name":[{"@value":"Tomohiko Niizeki"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319738979077","@type":"Researcher","foaf:name":[{"@value":"Wenhong Wang"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319738979074","@type":"Researcher","foaf:name":[{"@value":"Shinya Kasai"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319738979080","@type":"Researcher","foaf:name":[{"@value":"Seiji Mitani"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319738979072","@type":"Researcher","foaf:name":[{"@value":"Koichiro Inomata"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319738979075","@type":"Researcher","foaf:name":[{"@value":"Kazuhiro Hono"}],"jpcoar:affiliationName":[{"@value":"National Institute for Materials Science (NIMS Magnetic Materials Center, ), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2010-05-24","prism:volume":"96","prism:number":"21","prism:startingPage":"212505"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3441409/13413152/212505_1_online.pdf"}],"createdAt":"2010-05-28","modifiedAt":"2023-07-02","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050283687645183744","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Towards Oxide Electronics: a Roadmap"}]},{"@id":"https://cir.nii.ac.jp/crid/1050300679169567232","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Quantum Annealing Optimization Method for the Design of Barrier Materials in Magnetic Tunnel Junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1050300679169593344","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Bias voltage effects on tunneling magnetoresistance in Fe/MgAl2O4/Fe(001) junctions: Comparative study with Fe/MgO/Fe(001) junctions"},{"@value":"Bias voltage effects on tunneling magnetoresistance in Fe/\n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"><mml:msub><mml:mi mathvariant=\"normal\">MgAl</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mn>4</mml:mn></mml:msub><mml:mo>/</mml:mo><mml:mi mathvariant=\"normal\">Fe</mml:mi><mml:mo>(</mml:mo><mml:mn>001</mml:mn><mml:mo>)</mml:mo></mml:math>\n junctions: Comparative study with Fe/MgO/Fe(001) junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1050306031277893504","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Nano-crystal domains in Co-based fcc(111) epitaxial magnetic junctions and their impact on tunnel magnetoresistance"}]},{"@id":"https://cir.nii.ac.jp/crid/1050863629123017344","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Perpendicular magnetic anisotropy at the Fe/MgAl2O4 interface: Comparative first-principles study with Fe/MgO"},{"@value":"Perpendicular magnetic anisotropy at the \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"><mml:mrow><mml:mi>Fe</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mi>MgAl</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>\n interface: Comparative first-principles study with Fe/MgO"}]},{"@id":"https://cir.nii.ac.jp/crid/1360002217100276352","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Efficient spin injection through a crystalline AlO<i>x</i> tunnel barrier prepared by the oxidation of an ultra-thin Al epitaxial layer on GaAs"}]},{"@id":"https://cir.nii.ac.jp/crid/1360002217102943104","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Fabrication of MgAl2O4 tunnel barrier by radio frequency-sputtering method and magnetoresistance effect through it with Fe or Fe4N ferromagnetic electrode"}]},{"@id":"https://cir.nii.ac.jp/crid/1360002217449311872","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Investigation on the formation process of single-crystalline GaO<sub><i>x</i></sub>barrier in Fe/GaO<sub><i>x</i></sub>/MgO/Fe magnetic tunnel junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360002218589192576","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Signature of Coherent Transport in Epitaxial Spinel-Based Magnetic Tunnel Junctions Probed by Shot Noise Measurement"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449890816128","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Li-substituted MgAl<sub>2</sub>O<sub>4</sub> barriers for spin-dependent coherent tunneling"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449891603840","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004231939641600","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Microstructural evolution of perpendicular magnetization films with an ultra-thin Co2FeAl/MgAl2O4(001) structure"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004233488944128","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Robustness of Voltage-induced Magnetocapacitance"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004239518615680","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of MgO Underlying Layer on the Growth of GaOx Tunnel Barrier in Epitaxial Fe/GaOx/(MgO)/Fe Magnetic Tunnel Junction Structure"}]},{"@id":"https://cir.nii.ac.jp/crid/1360005518823555072","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Perpendicular orbital and quadrupole anisotropies at Fe/MgO interfaces detected by x-ray magnetic circular and linear dichroisms"}]},{"@id":"https://cir.nii.ac.jp/crid/1360009142602993792","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Interfacial resonant tunneling induced by folded bands and providing highly spin-polarized current in spinel-oxide barrier junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360013168822676608","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Observation and theoretical calculations of voltage-induced large magnetocapacitance beyond 330% in MgO-based magnetic tunnel junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360013168831400320","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhanced Magnetoresistance under Bias Voltage in \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\" overflow=\"scroll\"><mml:mi>Fe</mml:mi></mml:math>\n/\n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\" overflow=\"scroll\"><mml:mrow><mml:mi>Mg</mml:mi><mml:mi mathvariant=\"normal\">O</mml:mi></mml:mrow></mml:math>\n/\n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\" overflow=\"scroll\"><mml:msub><mml:mrow><mml:mi>Mg</mml:mi><mml:mi>Al</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">O</mml:mi></mml:mrow></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:math>\n/\n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\" overflow=\"scroll\"><mml:mrow><mml:mi>Mg</mml:mi><mml:mi mathvariant=\"normal\">O</mml:mi></mml:mrow></mml:math>\n/\n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\" overflow=\"scroll\"><mml:mi>Fe</mml:mi></mml:math>\n Trilayer Tunneling Barrier Junction"}]},{"@id":"https://cir.nii.ac.jp/crid/1360016864736875392","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"<i>Ab initio</i> study on the possible magnetic topological semimetallic state in MnMg2O4"}]},{"@id":"https://cir.nii.ac.jp/crid/1360021390572225024","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Influence of alkali-fluoride insertion layers on the perpendicular magnetic anisotropy at the Fe/MgO interface"}]},{"@id":"https://cir.nii.ac.jp/crid/1360025431123287680","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhanced tunnel magnetoresistance of Fe/MgGa2O4/Fe(001) magnetic tunnel junctions by interface-tuning with atomic-scale MgO insertion layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360283692077442944","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Low-resistive monocrystalline Mg-Al-O barrier magnetic tunnel junctions for spin-transfer magnetization switching"}]},{"@id":"https://cir.nii.ac.jp/crid/1360283692079526400","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Lattice-matched magnetic tunnel junctions using a Heusler alloy Co2FeAl and a cation-disorder spinel Mg-Al-O barrier"}]},{"@id":"https://cir.nii.ac.jp/crid/1360283692084930816","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Giant tunnel magnetoresistance in polycrystalline magnetic tunnel junctions with highly textured MgAl2O4(001) based barriers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284921833497984","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Fabrication of MgAl<sub>2</sub>O<sub>4</sub>Thin Films on Ferromagnetic Heusler Alloy Fe<sub>2</sub>CrSi by Reactive Magnetron Sputtering"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924860058240","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Theoretical study of rectifying properties in a terahertz regime with a zero-bias voltage for fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285705259909888","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Interface perpendicular magnetic anisotropy in Fe/MgAl<sub>2</sub>O<sub>4</sub>layered structures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285708897078144","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Perpendicular magnetic anisotropy at lattice-matched Co2FeAl/MgAl2O4(001) epitaxial interfaces"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617708487296","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Spin-Resolved Contribution to Perpendicular Magnetic Anisotropy and Gilbert Damping in Interface-Engineered \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\" overflow=\"scroll\"><mml:mi>Fe</mml:mi><mml:mo>/</mml:mo><mml:msub><mml:mrow><mml:mi>Mg</mml:mi><mml:mi>Al</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mrow><mml:mi mathvariant=\"normal\">O</mml:mi></mml:mrow></mml:mrow><mml:mn>4</mml:mn></mml:msub></mml:math>\n Heterostructures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360306906079415168","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Polarization-dependent photoluminescence of Ce-implanted MgO and MgAl<sub>2</sub>O<sub>4</sub>"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565167055762304","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Post-oxidized Mg-Al-O(001) coherent tunneling barrier in a wide range of resistance-area products"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565167767710592","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"First-principles study of tunneling magnetoresistance in Fe/MgAl<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>O<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\" display=\"inline\"><mml:msub><mml:mrow/><mml:mn>4</mml:mn></mml:msub></mml:math>/Fe(001) magnetic tunnel junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360565167767896704","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhanced tunnel magnetoresistance in a spinel oxide barrier with cation-site disorder"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399837115264","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Large perpendicular magnetic anisotropy in epitaxial Fe/MgAl<sub>2</sub>O<sub>4</sub>(001) heterostructures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399844429312","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360570166669393536","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Tunnel magnetoresistance effect in a magnetic tunnel junction with a B2-Fe3Sn electrode"}]},{"@id":"https://cir.nii.ac.jp/crid/1360576118710061440","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Unconventional bias dependence of tunnel magnetoresistance induced by the Coulomb blockade effect"}]},{"@id":"https://cir.nii.ac.jp/crid/1360576118796109696","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhanced tunnel magnetoresistance in Fe/Mg4Al-O<i>x</i>/Fe(001) magnetic tunnel junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360579811533597440","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Large magnetocapacitance beyond 420% in epitaxial magnetic tunnel junctions with an MgAl2O4 barrier"}]},{"@id":"https://cir.nii.ac.jp/crid/1360584341829581184","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Large magnetocapacitance of up to 456% at room temperature in FeCo/MgAl<sub>2</sub>O<sub>4</sub>/FeCo(001) magnetic tunnel junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874813635584","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Three-dimensional integration technology of magnetic tunnel junctions for magnetoresistive random access memory application"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874814679168","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Chemical ordering and large tunnel magnetoresistance in Co<sub>2</sub>FeAl/MgAl<sub>2</sub>O<sub>4</sub>/Co<sub>2</sub>FeAl(001) junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874822127616","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Synthesis of metastable B2-type Fe–Sn alloy epitaxial films and study of their magnetic properties"}]},{"@id":"https://cir.nii.ac.jp/crid/1360849939384113920","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Realizing Room‐Temperature Resonant Tunnel Magnetoresistance in Cr/Fe/MgAl\n                    <sub>2</sub>\n                    O\n                    <sub>4</sub>\n                    Quasi‐Quantum Well Structures"}]},{"@id":"https://cir.nii.ac.jp/crid/1360849944948976768","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Machine learning analysis of tunnel magnetoresistance of magnetic tunnel junctions with disordered \n<mml:math xmlns:mml=\"http://www.w3.org/1998/Math/MathML\"><mml:mrow><mml:mi>MgA</mml:mi><mml:msub><mml:mi mathvariant=\"normal\">l</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant=\"normal\">O</mml:mi><mml:mn>4</mml:mn></mml:msub></mml:mrow></mml:math>"}]},{"@id":"https://cir.nii.ac.jp/crid/1361412892894712576","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Great Differences between Low-Temperature Grown Co<sub>2</sub>FeSi and Co<sub>2</sub>MnSi Films on Single-Crystalline Oxides"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001205285512704","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Crystallinity and Transport Properties in Fe/MgAl2O4/Fe (001) Epitaxial Magnetic Tunnel Junctions"},{"@language":"ja","@value":"エピタキシャル　Ｆｅ／ＭｇＡｌ２Ｏ４／Ｆｅ（００１）強磁性トンネル接合における結晶性と伝導特性"},{"@language":"ja-Kana","@value":"エピタキシャル Fe MgAl2O4 Fe 001 キョウジセイ トンネル セツゴウ ニ オケル ケッショウセイ ト デンドウ トクセイ"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681433828608","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Metallic Spintronics and Surface Science"},{"@language":"ja","@value":"金属スピントロニクスと表面科学"},{"@language":"ja-Kana","@value":"キンゾク スピントロニクス ト ヒョウメン カガク"}]},{"@id":"https://cir.nii.ac.jp/crid/1523106605432679424","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"L1[0] ordering of FePtB films on a thin MgO layer"},{"@language":"ja-Kana","@value":"L1 0 ordering of FePtB films on a thin MgO layer"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.3441409"},{"@type":"OPENAIRE","@value":"doi_dedup___::ac047797ccf93236b5fb2e1eec0d5761"},{"@type":"CROSSREF","@value":"10.1063/1.4813522_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/1.4906762_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1088/1361-6463/aa861b_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1143/apex.5.053003_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1143/apex.4.023001_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1038/s41598-018-33065-y_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevb.96.054428_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevb.98.224421_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.3390/s17102424_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.7567/apex.11.063008_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.7567/jjap.51.02bm04_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/1.5127665_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevb.102.144423_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1038/s41598-021-93226-4_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevapplied.16.044037_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/9.0000317_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevb.109.064413_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevapplied.20.024044_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/5.0247660_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/1.4824134_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/1.4904716_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/1.5013076_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1002/pssr.201409340_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/1.4978663_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1143/jjap.51.02bm04_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.7567/apex.10.063002_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevapplied.14.064027_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.35848/1882-0786/ad59f4_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/1.4895104_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevb.86.024426_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevb.86.184401_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.7567/1882-0786/ab4958_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.7567/jjap.56.04cn02_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.04fn04_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.120302_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1016/j.actamat.2017.12.018_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/1.5113544_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/5.0077052_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1063/5.0082715_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1038/s41598-022-11545-6_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1016/j.actamat.2023.119394_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.35848/1882-0786/ad0b40_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.3379/msjmag.1104r011_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.7567/apex.9.053004_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.7567/jjap.55.110310_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1002/advs.201901438_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1103/physrevresearch.2.023187_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1380/jsssj.32.145_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1016/j.apsusc.2019.03.312_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"},{"@type":"CROSSREF","@value":"10.1021/acsaelm.9b00546_references_DOI_ACQ2Dz9xwuJ03ZVrxiPSfFxQyzf"}]}