著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
S. Karmalkar and N. Satyan and D.M. Sathaiya,On the resolution of the mechanism for reverse gate leakage in AlGaN/GaN HEMTs,IEEE Electron Device Letters,0741-3106,Institute of Electrical and Electronics Engineers (IEEE),2006-02,27,2,87-89,https://cir.nii.ac.jp/crid/1363670319911117056,https://doi.org/10.1109/led.2005.862672