{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670319952169984.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.114359"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/67/13/1868/18514174/1868_1_online.pdf"}}],"dc:title":[{"@value":"High-power InGaN single-quantum-well-structure blue and violet light-emitting diodes"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>High-power blue and violet light-emitting diodes (LEDs) based on III–V nitrides were grown by metalorganic chemical vapor deposition on sapphire substrates. As an active layer, the InGaN single-quantum-well-structure was used. The violet LEDs produced 5.6 mW at 20 mA, with a sharp peak of light output at 405 nm, and exhibited an external quantum efficiency of 9.2%. The blue LEDs produced 4.8 mW at 20 mA and sharply peaked at 450 nm, corresponding to an external quantum efficiency of 8.7%. These values of the output power and the quantum efficiencies are the highest ever reported for violet and blue LEDs.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670319952169984","@type":"Researcher","foaf:name":[{"@value":"Shuji Nakamura"}],"jpcoar:affiliationName":[{"@value":"Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319952169987","@type":"Researcher","foaf:name":[{"@value":"Masayuki Senoh"}],"jpcoar:affiliationName":[{"@value":"Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670319952169986","@type":"Researcher","foaf:name":[{"@value":"Naruhito Iwasa"}],"jpcoar:affiliationName":[{"@value":"Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1380298344046804608","@type":"Researcher","foaf:name":[{"@value":"Shin-ichi Nagahama"}],"jpcoar:affiliationName":[{"@value":"Department of Research and Development, Nichia Chemical Industries, Ltd., 491 Oka, Kaminaka, Anan, Tokushima 774, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"1995-09-25","prism:volume":"67","prism:number":"13","prism:startingPage":"1868","prism:endingPage":"1870"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/67/13/1868/18514174/1868_1_online.pdf"}],"createdAt":"2002-07-26","modifiedAt":"2024-02-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003446854265856","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of p–n 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indium tin oxide dual layer by oblique angle deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206248064896","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells."},{"@language":"ja-Kana","@value":"Quantum-Confined Stark Effect due to Pi"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206248283008","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Growth of Ga1-xBxN by Molecular Beam Epitaxy."},{"@language":"ja-Kana","@value":"Growth of Ga1-xBxN by Molecular Beam Ep"},{"@value":"Growth of Ga<sub>1-x</sub>B<sub>x</sub>N by Molecular Beam Epitaxy"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206248642304","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Crystal Growth and Optical Property of GaN on Silica Glass by 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