{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670320061892864.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1889/1.1832239"}},{"identifier":{"@type":"URI","@value":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1889%2F1.1832239"}},{"identifier":{"@type":"URI","@value":"https://sid.onlinelibrary.wiley.com/doi/pdf/10.1889/1.1832239"}}],"dc:title":[{"@value":"P‐2: 3.5 inch QVGA Low‐Temperature Poly‐Si TFT LCD with Integrated Driver Circuits"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>Abstract</jats:title>\n                  <jats:p>\n                    Using the low temperature poly‐Si technology, the 3.5‐inch diagonal QVGA320* RGB*240 TFT‐LCD with integrated circuits was developed for handheld applications. We integrated 6 bit digital data driver with ramp‐type digital‐analogue converter and gate driver that can operate bi‐directionally. The characteristics of the poly‐Si TFT used to integrate driver circuits are followings; 1 in NMOS, Vth∼2V and mobility∼200cm\n                    <jats:sup>2</jats:sup>\n                    /Vsec, 2 in PMOS, Vth ∼ −1.61V and mobility ∼100cm\n                    <jats:sup>2</jats:sup>\n                    /Vsec.\n                  </jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380298454081404672","@type":"Researcher","foaf:name":[{"@value":"Sang‐Soo Han"}]},{"@id":"https://cir.nii.ac.jp/crid/1380298454081404676","@type":"Researcher","foaf:name":[{"@value":"Kyoung‐Moon Lim"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320061892869","@type":"Researcher","foaf:name":[{"@value":"Juhn S. Yoo"}]},{"@id":"https://cir.nii.ac.jp/crid/1380298454081404673","@type":"Researcher","foaf:name":[{"@value":"Young‐Sik Jeong"}]},{"@id":"https://cir.nii.ac.jp/crid/1380298454081404674","@type":"Researcher","foaf:name":[{"@value":"Kyoung‐Eon Lee"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320061892864","@type":"Researcher","foaf:name":[{"@value":"JoonKyu Park"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320061892866","@type":"Researcher","foaf:name":[{"@value":"Dae Hyun Nam"}]},{"@id":"https://cir.nii.ac.jp/crid/1380298454081404545","@type":"Researcher","foaf:name":[{"@value":"Seok‐Woo Lee"}]},{"@id":"https://cir.nii.ac.jp/crid/1380298454081404677","@type":"Researcher","foaf:name":[{"@value":"Jin‐Mo Yoon"}]},{"@id":"https://cir.nii.ac.jp/crid/1380298454081404675","@type":"Researcher","foaf:name":[{"@value":"Yun‐Ho Jung"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320061892996","@type":"Researcher","foaf:name":[{"@value":"Hyun Sik Seo"}]},{"@id":"https://cir.nii.ac.jp/crid/1380298454081404544","@type":"Researcher","foaf:name":[{"@value":"Chang‐Dong Kim"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"0097966X"},{"@type":"EISSN","@value":"21680159"}],"prism:publicationName":[{"@value":"SID Symposium Digest of Technical Papers"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"2003-05","prism:volume":"34","prism:number":"1","prism:startingPage":"208","prism:endingPage":"211"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://api.wiley.com/onlinelibrary/tdm/v1/articles/10.1889%2F1.1832239"},{"@id":"https://sid.onlinelibrary.wiley.com/doi/pdf/10.1889/1.1832239"}],"createdAt":"2005-01-05","modifiedAt":"2025-11-04","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360566396788140800","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009408852192128","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Counting-based digital-to-analog converter scheme for compact column driver with low-temperature polycrystalline silicon thin-film transistors"},{"@language":"ja-Kana","@value":"Counting based digital to analog converter scheme for compact column driver with low temperature polycrystalline silicon thin film transistors"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1889/1.1832239"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.1906_references_DOI_ZbMkwRXprS448nFntioF9xFBb6W"},{"@type":"CROSSREF","@value":"10.1143/apex.3.061401_references_DOI_ZbMkwRXprS448nFntioF9xFBb6W"}]}