{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670320236979200.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1002/andp.201800482"}},{"identifier":{"@type":"URI","@value":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/andp.201800482"}},{"identifier":{"@type":"URI","@value":"https://onlinelibrary.wiley.com/doi/full-xml/10.1002/andp.201800482"}}],"dc:title":[{"@value":"Room‐Temperature Phosphorescence in Metal‐Free Organic Materials"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:title>Abstract</jats:title><jats:p>Purely organic materials with room‐temperature phosphorescence (RTP) have attracted a growing interest for their potential applications in biological imaging, digital encryption, optoelectronic devices, and so on. To date, many strategies have succeeded in designing efficient organic RTP materials by overcoming the spin‐forbidden transition between singlet and triplet states. However, the underlying mechanisms of RTP still remain ambiguous. Such spin prohibition in phosphorescence are clarified, herein, from the perspective of perturbation theory, helping to understand the intrinsic relationship among various phosphorescence parameters, like phosphorescence efficiency, lifetime, intersystem crossing rate, as well as radiative and nonradiative rates. Taking into consideration the recent progress in organic RTP materials, these factors are further illustrated by a selection of the most relevant molecules. In addition, some novel RTP phenomena are also reviewed, thus providing an excellent guideline to constructing efficient RTP materials.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670320236979205","@type":"Researcher","foaf:name":[{"@value":"Huili Ma"}],"jpcoar:affiliationName":[{"@value":"Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (Nanjing Tech)  30 South Puzhu Road Nanjing 211816 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320236979201","@type":"Researcher","foaf:name":[{"@value":"Anqi Lv"}],"jpcoar:affiliationName":[{"@value":"Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (Nanjing Tech)  30 South Puzhu Road Nanjing 211816 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320236979200","@type":"Researcher","foaf:name":[{"@value":"Lishun Fu"}],"jpcoar:affiliationName":[{"@value":"Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (Nanjing Tech)  30 South Puzhu Road Nanjing 211816 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320236979203","@type":"Researcher","foaf:name":[{"@value":"Shan Wang"}],"jpcoar:affiliationName":[{"@value":"Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (Nanjing Tech)  30 South Puzhu Road Nanjing 211816 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320236979202","@type":"Researcher","foaf:name":[{"@value":"Zhongfu An"}],"jpcoar:affiliationName":[{"@value":"Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (Nanjing Tech)  30 South Puzhu Road Nanjing 211816 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320236979206","@type":"Researcher","foaf:name":[{"@value":"Huifang Shi"}],"jpcoar:affiliationName":[{"@value":"Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (Nanjing Tech)  30 South Puzhu Road Nanjing 211816 China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320236979204","@type":"Researcher","foaf:name":[{"@value":"Wei Huang"}],"jpcoar:affiliationName":[{"@value":"Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM) Nanjing Tech University (Nanjing Tech)  30 South Puzhu Road Nanjing 211816 China"},{"@value":"Institute of Flexible Electronics (IFE) Northwestern Polytechnical University (NPU)  127 West Youyi Road Xi'an 710072 China"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00033804"},{"@type":"EISSN","@value":"15213889"}],"prism:publicationName":[{"@value":"Annalen der Physik"}],"dc:publisher":[{"@value":"Wiley"}],"prism:publicationDate":"2019-04-02","prism:volume":"531","prism:number":"7","prism:startingPage":"1800482"},"reviewed":"false","dc:rights":["http://onlinelibrary.wiley.com/termsAndConditions#vor"],"url":[{"@id":"https://onlinelibrary.wiley.com/doi/pdf/10.1002/andp.201800482"},{"@id":"https://onlinelibrary.wiley.com/doi/full-xml/10.1002/andp.201800482"}],"createdAt":"2019-04-02","modifiedAt":"2023-09-09","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050020132110742528","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"The regioisomeric effect on the excited-state fate leading to room-temperature phosphorescence or thermally activated delayed fluorescence in a dibenzophenazine-cored donor-acceptor-donor system"},{"@value":"Regioisomeric Effect on the Excited-State Fate Leading to Room-Temperature Phosphorescence or Thermally Activated 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