Empirical fit to band discontinuities and barrier heights in III–V alloy systems

DOI PDF 被引用文献9件
  • Sandip Tiwari
    IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598
  • David J. Frank
    IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598

書誌事項

公開日
1992-02-03
DOI
  • 10.1063/1.106575
公開者
AIP Publishing

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説明

<jats:p>We present a figure summarizing the variation of conduction band discontinuity, valence band discontinuity, and gold Schottky barrier height for binary and ternary III–V semiconductors. This figure, which applies to unstrained material, makes use of the property of transitivity in band alignments, and the observed experimental correlation between barrier heights and band gap discontinuities, to consolidate a wide range of data. The figure should be very useful in the design of novel heterostructure electronic and optical devices.</jats:p>

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