{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670320340830976.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.106575"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/60/5/630/18487214/630_1_online.pdf"}}],"dc:title":[{"@value":"Empirical fit to band discontinuities and barrier heights in III–V alloy systems"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We present a figure summarizing the variation of conduction band discontinuity, valence band discontinuity, and gold Schottky barrier height for binary and ternary III–V semiconductors. This figure, which applies to unstrained material, makes use of the property of transitivity in band alignments, and the observed experimental correlation between barrier heights and band gap discontinuities, to consolidate a wide range of data. The figure should be very useful in the design of novel heterostructure electronic and optical devices.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670320340830977","@type":"Researcher","foaf:name":[{"@value":"Sandip Tiwari"}],"jpcoar:affiliationName":[{"@value":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320340830976","@type":"Researcher","foaf:name":[{"@value":"David J. Frank"}],"jpcoar:affiliationName":[{"@value":"IBM Research Division, IBM Thomas J. Watson Research Center, Yorktown Heights, New York 10598"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"1992-02-03","prism:volume":"60","prism:number":"5","prism:startingPage":"630","prism:endingPage":"632"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/60/5/630/18487214/630_1_online.pdf"}],"createdAt":"2002-07-26","modifiedAt":"2024-02-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360568470846575104","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Characterisation of thin-layer resonant tunnelling diodes grown by MOVPE"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206248441472","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Lateral Positioning and Vertical Stacking of InAs Islands on GaAs Substrates: Designing Quantum Transport Devices."},{"@language":"ja-Kana","@value":"Lateral Positioning and Vertical Stacki"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206253673856","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Mechanism of Carrier Accumulation at the Hetero Interface between InSb and GaAs."}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681221933056","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Influence of Thermodynamic Factors on Growth of AlAs1-xSbx Alloys."},{"@value":"Influence of Thermodynamic Factors on Growth of AlAs<sub>1-x</sub>Sb<sub>x</sub> Alloys"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681222718464","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"High-Power InGaAs-GaAs-InGaP Strained Quantum Well Lasers on P-Type GaAs Substrate."}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681222736512","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Organometallic Vapor Phase Epitaxial Growth of AlAsxSb1-x Films Using Tertiarybutylarsine."},{"@value":"Organometallic Vapor Phase Epitaxial Growth   of AlAs<sub>x</sub>Sb<sub>1-x</sub> Films Using Tertiarybutylarsine"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681223659904","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Influence of As/Al and Sb/Al Gas Flow Ratios on Growth of AlAs1-xSbx Alloys."},{"@value":"Influence of As/Al and Sb/Al Gas Flow Ratios on Growth of AlAs<sub>1-x</sub>Sb<sub>x</sub> Alloys"}]},{"@id":"https://cir.nii.ac.jp/crid/1520290883108478592","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Characterization of indium segregation in metalorganic vapor phase epitaxy-grown InGaP by Schottky barrier height measurement"},{"@language":"ja-Kana","@value":"Characterization of indium segregation in metalorganic vapor phase epitaxy grown InGaP by Schottky barrier height measurement"}]},{"@id":"https://cir.nii.ac.jp/crid/1521417755973384320","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Double-Band Anticrossing in GaAsSbN Induced by Nitrogen and Antimony Incorporation"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.106575"},{"@type":"CROSSREF","@value":"10.7567/apex.6.121202_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"},{"@type":"CROSSREF","@value":"10.1143/jjap.33.l1370_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"},{"@type":"CROSSREF","@value":"10.1143/jjap.34.l1581_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"},{"@type":"CROSSREF","@value":"10.1143/jjap.33.l402_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"},{"@type":"CROSSREF","@value":"10.1143/jjap.34.2318_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"},{"@type":"CROSSREF","@value":"10.7567/jjap.50.011201_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"},{"@type":"CROSSREF","@value":"10.1117/12.2510119_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"},{"@type":"CROSSREF","@value":"10.1143/jjap.38.1107_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"},{"@type":"CROSSREF","@value":"10.1143/jjap.50.011201_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"},{"@type":"CROSSREF","@value":"10.1143/jjap.36.4123_references_DOI_95gRwkZs29dkq0pvCqydkjdZjck"}]}