{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670320365870080.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.3688051"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3688051/14253090/081902_1_online.pdf"}}],"dc:title":[{"@value":"Stimulated emission in AlGaN/AlGaN quantum wells with different Al content"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Stimulated emission (SE) is studied in AlGaN/AlGaN multiple quantum wells (MQWs) with different Al content grown on sapphire substrate. The spectra of spontaneous and stimulated emission and their transformations with increasing temperature as well as stimulated emission thresholds were measured in the temperature range from 8 to 300 K. Phonon-assisted band broadening in low-Al-content MQWs and double-scaled potential profile in high-Al-content MQWs were observed in the samples and linked with carrier localization conditions. The temperature dependence of the stimulated emission threshold was similar in the samples where the stimulated transitions occur between extended states and in the samples where the transitions occur in localized states. The stimulated emission threshold depends predominantly on the density of nonradiative recombination centers.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670320365870085","@type":"Researcher","foaf:name":[{"@value":"J. Mickevičius"}],"jpcoar:affiliationName":[{"@value":"Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320365870087","@type":"Researcher","foaf:name":[{"@value":"J. Jurkevičius"}],"jpcoar:affiliationName":[{"@value":"Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320365870086","@type":"Researcher","foaf:name":[{"@value":"K. Kazlauskas"}],"jpcoar:affiliationName":[{"@value":"Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320365870082","@type":"Researcher","foaf:name":[{"@value":"A. Žukauskas"}],"jpcoar:affiliationName":[{"@value":"Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320365870088","@type":"Researcher","foaf:name":[{"@value":"G. Tamulaitis"}],"jpcoar:affiliationName":[{"@value":"Semiconductor Physics Department and Institute of Applied Research, Vilnius University 1 , Sauletekio 9-III, LT-10222, Vilnius, Lithuania"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320365870083","@type":"Researcher","foaf:name":[{"@value":"M. S. Shur"}],"jpcoar:affiliationName":[{"@value":"Department of ECE and CIE, Rensselaer Polytechnic Institute 2 , Troy, New York 12180, USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320365870080","@type":"Researcher","foaf:name":[{"@value":"M. Shatalov"}],"jpcoar:affiliationName":[{"@value":"Department of ECE and CIE, Rensselaer Polytechnic Institute 2 , Troy, New York 12180, USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320365870084","@type":"Researcher","foaf:name":[{"@value":"J. Yang"}],"jpcoar:affiliationName":[{"@value":"Department of ECE and CIE, Rensselaer Polytechnic Institute 2 , Troy, New York 12180, USA"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320365870081","@type":"Researcher","foaf:name":[{"@value":"R. Gaska"}],"jpcoar:affiliationName":[{"@value":"3Sensor Electronic Technology, Inc., 1195 Atlas Road, Columbia, South Carolina 29209, USA"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2012-02-20","prism:volume":"100","prism:number":"8","prism:startingPage":"081902"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.3688051/14253090/081902_1_online.pdf"}],"createdAt":"2012-02-22","modifiedAt":"2023-06-18","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449882619264","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Ultraviolet-B band lasers fabricated on highly relaxed thick Al<sub>0.55</sub>Ga<sub>0.45</sub>N films grown on various types of AlN wafers"}]},{"@id":"https://cir.nii.ac.jp/crid/1360009142491402624","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Photoluminescence efficiency of Al-rich AlGaN heterostructures in a wide range of photoexcitation densities over temperatures up to 550 K"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859254272","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Electrical properties of relaxed p-GaN/p-AlGaN superlattices and their application in ultraviolet-B light-emitting devices"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567183877320320","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Temperature dependence of excitonic transitions in Al0.60Ga0.40N/Al0.70Ga0.30N multiple quantum wells from 4 to 750 K"}]},{"@id":"https://cir.nii.ac.jp/crid/1360572092555155712","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Analysis of Spontaneous Subpeak Emission from the Guide Layers of the Ultraviolet‐B Laser Diode Structure Containing Composition‐Graded p‐AlGaN Cladding Layers"}]},{"@id":"https://cir.nii.ac.jp/crid/1361131414759465216","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High Crystallinity and Highly Relaxed Al<sub>0.60</sub>Ga<sub>0.40</sub>N Films Using Growth Mode Control Fabricated on a Sputtered AlN Template with High‐Temperature Annealing"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.3688051"},{"@type":"CROSSREF","@value":"10.1103/physrevb.102.035201_references_DOI_5bHaUULFt0FtGg1FJRvUi8csE4j"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab07a3_references_DOI_5bHaUULFt0FtGg1FJRvUi8csE4j"},{"@type":"CROSSREF","@value":"10.1063/1.5023996_references_DOI_5bHaUULFt0FtGg1FJRvUi8csE4j"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab0d04_references_DOI_5bHaUULFt0FtGg1FJRvUi8csE4j"},{"@type":"CROSSREF","@value":"10.1002/pssa.201900864_references_DOI_5bHaUULFt0FtGg1FJRvUi8csE4j"},{"@type":"CROSSREF","@value":"10.1002/pssa.201900868_references_DOI_5bHaUULFt0FtGg1FJRvUi8csE4j"}]}