{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670320379686272.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.1469204"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/jap/article-pdf/91/10/6388/19207644/6388_1_online.pdf"}}],"dc:title":[{"@value":"Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>Damage evolution and subsequent recovery in 4H–SiC epitaxial layers irradiated with 1.1 MeV Al22+ molecular ions at 150 K to ion fluences from 1.5×1013 to 2.25×1014 Al cm−2 were studied by Rutherford backscattering spectroscopy (RBS) and C12(d,p)13C nuclear reaction analysis (NRA) using a 0.94 MeV deuterium (D+) beam in channeling geometry. Disorder on both the Si and C sublattices was measured simultaneously from the RBS scattering and NRA reaction yields. The relative disorder on both sublattices follows a nonlinear dependence on ion fluence that is consistent with a model based on simple defect accumulation and a direct-impact, defect-stimulated process for amorphization. At low ion fluences, the relative disorder on the C sublattice is higher than that on the Si sublattice. Isochronal annealing up to 870 K revealed the existence of three distinct recovery stages at ∼350, 520, and 650 K for low to intermediate damage levels. In highly damaged samples, where a buried amorphous layer is produced, the onset of a fourth recovery stage appears above 800 K. Similar recovery behaviors on both the Si and C sublattices suggests some coupling of recovery processes for Si and C defects.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670320379686272","@type":"Researcher","foaf:name":[{"@value":"Y. Zhang"}],"jpcoar:affiliationName":[{"@value":"Division of Ion Physics, Ångström Laboratory, Box 534, SE-751 21, Upsala, Sweden"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320379686273","@type":"Researcher","foaf:name":[{"@value":"W. J. Weber"}],"jpcoar:affiliationName":[{"@value":"Pacific Northwest National Laboratory, PO Box 999, Richland, Washington 99352"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320379686276","@type":"Researcher","foaf:name":[{"@value":"W. Jiang"}],"jpcoar:affiliationName":[{"@value":"Pacific Northwest National Laboratory, PO Box 999, Richland, Washington 99352"}]},{"@id":"https://cir.nii.ac.jp/crid/1380579819015621248","@type":"Researcher","foaf:name":[{"@value":"A. Hallén"}],"jpcoar:affiliationName":[{"@value":"Department of Microelectronics and IT, Royal Institute of Technology, Electrum 229, SE-164 40 Stockholm, Sweden"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320379686274","@type":"Researcher","foaf:name":[{"@value":"G. Possnert"}],"jpcoar:affiliationName":[{"@value":"Division of Ion Physics, Ångström Laboratory, Box 534, SE-751 21, Upsala, Sweden"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00218979"},{"@type":"EISSN","@value":"10897550"}],"prism:publicationName":[{"@value":"Journal of Applied Physics"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2002-05-15","prism:volume":"91","prism:number":"10","prism:startingPage":"6388","prism:endingPage":"6395"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/jap/article-pdf/91/10/6388/19207644/6388_1_online.pdf"}],"createdAt":"2002-07-26","modifiedAt":"2024-02-05","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360004232302386176","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Atomistic structures of nano-engineered SiC and radiation-induced amorphization resistance"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.1469204"},{"@type":"CROSSREF","@value":"10.1016/j.jnucmat.2015.06.036_references_DOI_XYMgOEid7e3JF9kMaPvgTNlkVcq"}]}