著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Jingnan Gao and Yufeng Jin and Bing Xie and Cheng P. Wen and Yilong Hao and Bo Shen and Maojun Wang,"Low ON-Resistance GaN Schottky Barrier Diode With High <inline-formula> <tex-math notation=""LaTeX"">$V_{\mathrm{ON}}$ </tex-math> </inline-formula> Uniformity Using LPCVD Si<sub>3</sub>N<sub>4</sub> Compatible Self-Terminated, Low Damage Anode Recess Technology",IEEE Electron Device Letters,0741-3106,Institute of Electrical and Electronics Engineers (IEEE),2018-06,39,6,859-862,https://cir.nii.ac.jp/crid/1363670320415063808,https://doi.org/10.1109/led.2018.2830998