{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670320423833600.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.1590740"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/83/1/84/18579744/84_1_online.pdf"}}],"dc:title":[{"@value":"Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>We demonstrate a method for measuring magnetoresistance (MR) and resistance area product (RA) of unpatterned magnetic tunnel junction film stacks. The RA is measured by making a series of four point probe resistance measurements on the surface of an unpatterned wafer at various probe spacings. The key to this technique is in placing the probes at the appropriate spacings, on the order of microns for typical applications. The MR is obtained by repeating the measurement at different magnetic fields. A simple conceptual model and an exact analytical solution in good agreement with experimental data are presented. The current-in-plane tunneling method requires no processing, is fast, and provides reliable data which are reflective of the deposition only.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670320423833601","@type":"Researcher","foaf:name":[{"@value":"D. C. Worledge"}],"jpcoar:affiliationName":[{"@value":"MRAM Development Alliance, IBM/Infineon Technologies, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320423833600","@type":"Researcher","foaf:name":[{"@value":"P. L. Trouilloud"}],"jpcoar:affiliationName":[{"@value":"MRAM Development Alliance, IBM/Infineon Technologies, T. J. Watson Research Center, P.O. Box 218, Yorktown Heights, New York 10598"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2003-07-07","prism:volume":"83","prism:number":"1","prism:startingPage":"84","prism:endingPage":"86"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/83/1/84/18579744/84_1_online.pdf"}],"createdAt":"2003-07-03","modifiedAt":"2024-02-04","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050019204192950528","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"631% room temperature tunnel magnetoresistance with large oscillation effect in CoFe/MgO/CoFe(001) junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003446852655104","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Influence of Chemical Composition of CoFeB on Tunneling Magnetoresistance and Microstructure in Polycrystalline CoFeB/MgO/CoFeB Magnetic Tunnel Junctions"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449884419456","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Perpendicular magnetic tunnel junctions with strong antiferromagnetic interlayer exchange coupling at first oscillation peak"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449884473728","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Perpendicular magnetic tunnel junction with enhanced anisotropy obtained by utilizing an Ir/Co interface"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449891603840","@type":"Article","resourceType":"学術雑誌論文(journal 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Temperature"},{"@language":"ja","@value":"室温作製ＭｇＯ（１００）配向膜を用いた垂直ＭＴＪ構造の試作"},{"@language":"ja-Kana","@value":"シツオン サクセイ MgO 100 ハイコウ マク オ モチイタ スイチョク MTJ コウゾウ ノ シサク"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282680270513792","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Orientational Control of Barrier Layer with Interfacial Modification and Its Effect on Tunnel Magnetoresistance in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions"},{"@language":"ja","@value":"ＣｏＦｅＢ／ＭｇＯ／ＣｏＦｅＢ　強磁性トンネル接合膜の積層界面制御による障壁膜配向制御とトンネル磁気抵抗効果"},{"@language":"ja-Kana","@value":"CoFeB MgO CoFeB キョウジセイ トンネル セツゴウマク ノ セキソウ カイメン セイギョ ニ ヨル ショウヘキ マク ハイコウ セイギョ ト トンネル ジキ テイコウ コウカ"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009409459248768","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Effect of Seed Layer on Room Temperature Tunnel Magnetoresistance of MgO Barriers Formed by Radical Oxidation in IrMn-Based Magnetic Tunnel 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