{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670320484779648.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.2767990"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2767990/13196282/061105_1_online.pdf"}}],"dc:title":[{"@value":"Simple lithographic approach for subwavelength structure antireflection"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>A simple lithographic method is developed to generate large-area antireflective subwavelength structures (SWSs), in which the metal island films are used as masks. Using magnetron sputter deposition, stochastically arranged Ag islands were fabricated on Si substrates with dimensions controlled in the range of 50∼400nm. After reactive ion etching with CF4, Si SWSs were formed, with the same arrangement and density as those of Ag islands. The measured reflectivity was decreased from ∼40% for polished Si to ∼5% for Si SWS surfaces. The residual reflection was thought to be mainly from the bottoms of “U”-shape grooves.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670320484779648","@type":"Researcher","foaf:name":[{"@value":"Sen Wang"}],"jpcoar:affiliationName":[{"@value":"China National Academy of Nanotechnology & Engineering Laboratory of Nanoimprint Lithography, , Tianjin 300457, People’s Republic of China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320484779650","@type":"Researcher","foaf:name":[{"@value":"Xiao Zheng Yu"}],"jpcoar:affiliationName":[{"@value":"China National Academy of Nanotechnology & Engineering Laboratory of Nanoimprint Lithography, , Tianjin 300457, People’s Republic of China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320484779649","@type":"Researcher","foaf:name":[{"@value":"Hong Tao Fan"}],"jpcoar:affiliationName":[{"@value":"China National Academy of Nanotechnology & Engineering Laboratory of Nanoimprint Lithography, , Tianjin 300457, People’s Republic of China"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2007-08-06","prism:volume":"91","prism:number":"6"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2767990/13196282/061105_1_online.pdf"}],"createdAt":"2007-08-06","modifiedAt":"2023-07-02","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360847874812846848","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Shape optimization of a moth-eye structure for omnidirectional and broadband antireflection"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.2767990"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab195d_references_DOI_3EBKpPnbSTqMuismfJz4DjKDiT1"}]}