{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670320500940928.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1039/c8cs00614h"}},{"identifier":{"@type":"URI","@value":"http://pubs.rsc.org/en/content/articlepdf/2019/CS/C8CS00614H"}}],"dc:title":[{"@value":"Organic and hybrid resistive switching materials and devices"}],"description":[{"type":"abstract","notation":[{"@value":"<p>This review presents a timely and comprehensive summary of organic and hybrid materials for nonvolatile resistive switching memory applications in the “More than Moore” era, with particular attention on their designing principles for electronic property tuning and flexible memory performance.</p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670320500941056","@type":"Researcher","foaf:name":[{"@value":"Shuang Gao"}],"jpcoar:affiliationName":[{"@value":"CAS Key Laboratory of Magnetic Materials and Devices"},{"@value":"Ningbo Institute of Materials Technology and Engineering"},{"@value":"Chinese Academy of Sciences"},{"@value":"Ningbo"},{"@value":"China"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320500941060","@type":"Researcher","foaf:name":[{"@value":"Xiaohui Yi"}],"jpcoar:affiliationName":[{"@value":"CAS Key Laboratory of Magnetic Materials and Devices"},{"@value":"Ningbo Institute of Materials Technology and Engineering"},{"@value":"Chinese Academy of 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