著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
C. P. Ho and J. D. Plummer,Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II . Comparison with Experiment and Discussion,Journal of The Electrochemical Society,0013-4651,The Electrochemical Society,1979-09-01,126,9,1523-1530,https://cir.nii.ac.jp/crid/1363670320579556480,https://doi.org/10.1149/1.2129321