著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Sadahiro Kato and Yoshihiro Satoh and Hitoshi Sasaki and Iwami Masayuki and Seikoh Yoshida,C-doped GaN buffer layers with high breakdown voltages for high-power operation AlGaN/GaN HFETs on 4-in Si substrates by MOVPE,Journal of Crystal Growth,0022-0248,Elsevier BV,2007-01,298,,831-834,https://cir.nii.ac.jp/crid/1363670320875432832,https://doi.org/10.1016/j.jcrysgro.2006.10.192