{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363670320952208768.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1021/cg015557k"}},{"identifier":{"@type":"URI","@value":"https://pubs.acs.org/doi/pdf/10.1021/cg015557k"}}],"dc:title":[{"@value":"Ammonothermal Recrystallization of Gallium Nitride with Acidic Mineralizers"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383670320952208768","@type":"Researcher","foaf:name":[{"@value":"Andrew P. Purdy"}],"jpcoar:affiliationName":[{"@value":"Chemistry Division, Code 6125, Naval Research Laboratory, 4555 Overlook AV, SE, Washington, DC 20375"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320952208769","@type":"Researcher","foaf:name":[{"@value":"R. Jason Jouet"}],"jpcoar:affiliationName":[{"@value":"Chemistry Division, Code 6125, Naval Research Laboratory, 4555 Overlook AV, SE, Washington, DC 20375"}]},{"@id":"https://cir.nii.ac.jp/crid/1383670320952208770","@type":"Researcher","foaf:name":[{"@value":"Clifford F. George"}],"jpcoar:affiliationName":[{"@value":"Chemistry Division, Code 6125, Naval Research Laboratory, 4555 Overlook AV, SE, Washington, DC 20375"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"15287483"},{"@type":"EISSN","@value":"15287505"}],"prism:publicationName":[{"@value":"Crystal Growth & Design"}],"dc:publisher":[{"@value":"American Chemical Society (ACS)"}],"prism:publicationDate":"2002-01-04","prism:volume":"2","prism:number":"2","prism:startingPage":"141","prism:endingPage":"145"},"reviewed":"false","url":[{"@id":"https://pubs.acs.org/doi/pdf/10.1021/cg015557k"}],"createdAt":"2002-07-26","modifiedAt":"2023-03-05","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360003449886754432","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Progress and Prospect of the Growth of Wide-Band-Gap Group III Nitrides: Development of the Growth Method for Single-Crystal Bulk GaN"}]},{"@id":"https://cir.nii.ac.jp/crid/1360003449889254144","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Preparation of free-standing GaN substrates from GaN layers crystallized by hydride vapor phase epitaxy on ammonothermal GaN seeds"}]},{"@id":"https://cir.nii.ac.jp/crid/1360306905637710464","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396805153408","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Ammonothermal Growth of GaN on an over-1-inch Seed Crystal"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566399840844800","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High Quality, Low Cost Ammonothermal Bulk GaN Substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871783712896","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Growth of Bulk GaN with Low Dislocation Density by the Ammonothermal Method Using Polycrystalline GaN Nutrient"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847871783772160","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Growth of Bulk GaN Crystals by the Basic Ammonothermal Method"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874812660992","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method"}]},{"@id":"https://cir.nii.ac.jp/crid/1390282681242928000","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Structural Characterization of Thick GaN Films Grown on Free-Standing GaN Seeds by the Ammonothermal Method Using Basic Ammonia"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1021/cg015557k"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.050001_references_DOI_DgVjWzi7QYMuFDfRaP1vfkDdMLA"},{"@type":"CROSSREF","@value":"10.1143/jjap.44.l1570_references_DOI_DgVjWzi7QYMuFDfRaP1vfkDdMLA"},{"@type":"CROSSREF","@value":"10.1143/jjap.46.l525_references_DOI_DgVjWzi7QYMuFDfRaP1vfkDdMLA"},{"@type":"CROSSREF","@value":"10.1143/jjap.44.l797_references_DOI_DgVjWzi7QYMuFDfRaP1vfkDdMLA"},{"@type":"CROSSREF","@value":"10.1063/5.0208853_references_DOI_DgVjWzi7QYMuFDfRaP1vfkDdMLA"},{"@type":"CROSSREF","@value":"10.7567/jjap.52.08ja01_references_DOI_DgVjWzi7QYMuFDfRaP1vfkDdMLA"},{"@type":"CROSSREF","@value":"10.1143/jjap.46.l889_references_DOI_DgVjWzi7QYMuFDfRaP1vfkDdMLA"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab06b3_references_DOI_DgVjWzi7QYMuFDfRaP1vfkDdMLA"},{"@type":"CROSSREF","@value":"10.7567/jjap.53.05fa04_references_DOI_DgVjWzi7QYMuFDfRaP1vfkDdMLA"}]}