著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
S.E. Rauch and G. La Rosa,The energy-driven paradigm of NMOSFET hot-carrier effects,IEEE Transactions on Device and Materials Reliability,1530-4388,Institute of Electrical and Electronics Engineers (IEEE),2005-12,5,4,701-705,https://cir.nii.ac.jp/crid/1363951793284776064,https://doi.org/10.1109/tdmr.2005.860560