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- X. A. Cao
- General Electric Global Research Center , Niskayuna, New York 12309
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- H. Lu
- General Electric Global Research Center , Niskayuna, New York 12309
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- S. F. LeBoeuf
- General Electric Global Research Center , Niskayuna, New York 12309
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- C. Cowen
- General Electric Global Research Center , Niskayuna, New York 12309
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- S. D. Arthur
- General Electric Global Research Center , Niskayuna, New York 12309
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- W. Wang
- Lumei Optoelectronics , El Monte, California 91776
書誌事項
- 公開日
- 2005-07-26
- DOI
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- 10.1063/1.2001738
- 公開者
- AIP Publishing
この論文をさがす
説明
<jats:p>GaN PiN rectifiers with high structural quality were grown on free-standing GaN substrates using metalorganic chemical vapor deposition. The lattice mismatch between the substrate and the epitaxial GaN was found to be ∼1×10−4. The full width at half maximum of the (0002) rocking curve was 79arcs compared to 230arcs for similar materials grown on sapphire. The incorporation of C, H, and O impurities in the homoepitaxial drift layer was reduced by a factor of 2–4. The rectifiers on GaN demonstrated rectification to −265V, which represents a 1.6× improvement over the rectifiers on sapphire and corresponds to a critical electric field ∼2.7MV∕cm. The homoepitaxial rectifiers also showed two orders of magnitude lower reverse leakage and a smaller negative temperature coefficient for breakdown voltage, consistent with a reduced defect density in the drift region.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 87 (5), 053503-, 2005-07-26
AIP Publishing
