{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1363951794166918656.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1063/1.2001738"}},{"identifier":{"@type":"URI","@value":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2001738/13139192/053503_1_online.pdf"}}],"dc:title":[{"@value":"Growth and characterization of GaN PiN rectifiers on free-standing GaN"}],"description":[{"type":"abstract","notation":[{"@value":"<jats:p>GaN PiN rectifiers with high structural quality were grown on free-standing GaN substrates using metalorganic chemical vapor deposition. The lattice mismatch between the substrate and the epitaxial GaN was found to be ∼1×10−4. The full width at half maximum of the (0002) rocking curve was 79arcs compared to 230arcs for similar materials grown on sapphire. The incorporation of C, H, and O impurities in the homoepitaxial drift layer was reduced by a factor of 2–4. The rectifiers on GaN demonstrated rectification to −265V, which represents a 1.6× improvement over the rectifiers on sapphire and corresponds to a critical electric field ∼2.7MV∕cm. The homoepitaxial rectifiers also showed two orders of magnitude lower reverse leakage and a smaller negative temperature coefficient for breakdown voltage, consistent with a reduced defect density in the drift region.</jats:p>"}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1383951794166918657","@type":"Researcher","foaf:name":[{"@value":"X. A. Cao"}],"jpcoar:affiliationName":[{"@value":"General Electric Global Research Center , Niskayuna, New York 12309"}]},{"@id":"https://cir.nii.ac.jp/crid/1383951794166918659","@type":"Researcher","foaf:name":[{"@value":"H. Lu"}],"jpcoar:affiliationName":[{"@value":"General Electric Global Research Center , Niskayuna, New York 12309"}]},{"@id":"https://cir.nii.ac.jp/crid/1383951794166918784","@type":"Researcher","foaf:name":[{"@value":"S. F. LeBoeuf"}],"jpcoar:affiliationName":[{"@value":"General Electric Global Research Center , Niskayuna, New York 12309"}]},{"@id":"https://cir.nii.ac.jp/crid/1383951794166918660","@type":"Researcher","foaf:name":[{"@value":"C. Cowen"}],"jpcoar:affiliationName":[{"@value":"General Electric Global Research Center , Niskayuna, New York 12309"}]},{"@id":"https://cir.nii.ac.jp/crid/1383951794166918656","@type":"Researcher","foaf:name":[{"@value":"S. D. Arthur"}],"jpcoar:affiliationName":[{"@value":"General Electric Global Research Center , Niskayuna, New York 12309"}]},{"@id":"https://cir.nii.ac.jp/crid/1383951794166918658","@type":"Researcher","foaf:name":[{"@value":"W. Wang"}],"jpcoar:affiliationName":[{"@value":"Lumei Optoelectronics , El Monte, California 91776"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00036951"},{"@type":"EISSN","@value":"10773118"}],"prism:publicationName":[{"@value":"Applied Physics Letters"}],"dc:publisher":[{"@value":"AIP Publishing"}],"prism:publicationDate":"2005-07-26","prism:volume":"87","prism:number":"5","prism:startingPage":"053503"},"reviewed":"false","url":[{"@id":"https://pubs.aip.org/aip/apl/article-pdf/doi/10.1063/1.2001738/13139192/053503_1_online.pdf"}],"createdAt":"2005-07-25","modifiedAt":"2023-07-03","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1050282677935235200","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Vertical GaN p–n diode with deeply etched mesa and the capability of avalanche breakdown"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859353728","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Deeply and vertically etched butte structure of vertical GaN p–n diode with avalanche capability"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924859371264","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Correlation between nanopipes formed from screw dislocations during homoepitaxial growth by metal-organic vapor-phase epitaxy and reverse leakage current in vertical p–n diodes on a free-standing GaN substrates"}]},{"@id":"https://cir.nii.ac.jp/crid/1360284924868431360","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Improvement of breakdown voltage of vertical GaN p–n junction diode with Ga<sub>2</sub>O<sub>3</sub> passivated by sputtering"}]},{"@id":"https://cir.nii.ac.jp/crid/1360290617670690048","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High‐Quality AlN Template Prepared by Face‐to‐Face Annealing of Sputtered AlN on Sapphire"}]},{"@id":"https://cir.nii.ac.jp/crid/1360566396809460224","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1360846642038707456","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Correlation between dislocations and leakage current of p-n diodes on a free-standing GaN substrate"}]},{"@id":"https://cir.nii.ac.jp/crid/1360847874814913280","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Electrical Characterization of GaN p–n Junctions Grown on Freestanding GaN Substrates by Metal–Organic Chemical Vapor Deposition"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009409231677824","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"p-InGaN/n-GaN Vertical Conducting Diodes on n〔+〕-SiC Substrate for High Power Electronic Device Applications"},{"@language":"ja-Kana","@value":"p InGaN n GaN Vertical Conducting Diodes on n SiC Substrate for High Power Electronic Device Applications"}]},{"@id":"https://cir.nii.ac.jp/crid/1520290883308354944","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"High-temperature characteristics of Al[x]Ga1-xN-based vertical conducting diodes"},{"@language":"ja-Kana","@value":"High temperature characteristics of Al x Ga1 xN based vertical conducting diodes"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1063/1.2001738"},{"@type":"CROSSREF","@value":"10.1143/jjap.50.031005_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"},{"@type":"CROSSREF","@value":"10.7567/1882-0786/aafdb9_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab106c_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"},{"@type":"CROSSREF","@value":"10.7567/jjap.57.070302_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"},{"@type":"CROSSREF","@value":"10.1002/pssb.202000352_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.2838_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"},{"@type":"CROSSREF","@value":"10.7567/1347-4065/ab1250_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"},{"@type":"CROSSREF","@value":"10.1063/1.5024704_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"},{"@type":"CROSSREF","@value":"10.7567/jjap.50.031005_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"},{"@type":"CROSSREF","@value":"10.1143/jjap.45.3387_references_DOI_WsEIR2XI6aAfVAb8hQKA9N7JtVv"}]}