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- S. A. Nikishin
- Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
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- B. A. Borisov
- Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
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- A. Chandolu
- Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
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- V. V. Kuryatkov
- Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
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- H. Temkin
- Department of Electrical and Computer Engineering and Nano Tech Center , Texas Tech University, Lubbock, Texas 79409-3102
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- M. Holtz
- Nano Tech Center/Department of Physics , Texas Tech University, Lubbock, Texas 79409
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- E. N. Mokhov
- The Fox Group Inc. , 1154 Stealth Street, Livermore, California 94550
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- Yu. Makarov
- The Fox Group Inc. , 1154 Stealth Street, Livermore, California 94550
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- H. Helava
- The Fox Group Inc. , 1154 Stealth Street, Livermore, California 94550
説明
<jats:p>High-quality short-period superlattices of AlN∕Al0.08Ga0.92N have been grown by gas-source molecular-beam epitaxy with ammonia on Al face of AlN (0001) substrates. A significant reduction was achieved in the dislocation density, down to 3×108cm−2. Complete removal of residual Al2O3 surface oxide is needed in order to obtain low dislocation density in homoepitaxy on AlN. We show that the presence of Al2O3 islands with the surface coverage as low as 0.2% results in increased dislocation density.</jats:p>
収録刊行物
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- Applied Physics Letters
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Applied Physics Letters 85 (19), 4355-4357, 2004-11-08
AIP Publishing