{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1364233268982268928.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1016/s0038-1098(96)00774-0"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0038109896007740?httpAccept=text/xml"}},{"identifier":{"@type":"URI","@value":"https://api.elsevier.com/content/article/PII:S0038109896007740?httpAccept=text/plain"}}],"dc:title":[{"@value":"Size-dependent near-infrared photoluminescence spectra of Si nanocrystals embedded in SiO2 matrices"}],"description":[{"notation":[{"@value":"Abstract   Photoluminescence (PL) spectra of Si nanocrystals embedded in SiO 2  films were measured as a function of the size. Samples were prepared by r.f. cosputtering of Si and SiO 2  and post-annealing. The average particle sizes for all the samples were directly estimated by high-resolution transmission electron microscopic observations. For each sample, a broad PL peak was observed in the near-infrared region. As the average particle size decreased from 3.8 nm to 2.7 nm, the peak exhibited a blue shift from 1.42 eV to 1.54 eV and its intensity increased progressively. This strong size dependence of the PL peak suggests that the PL peak arises from the recombination of electrons and holes confined in the Si nanocrystals."}]}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1380287380557715339","@type":"Researcher","foaf:name":[{"@value":"Y. Kanzawa"}]},{"@id":"https://cir.nii.ac.jp/crid/1384233268982268928","@type":"Researcher","foaf:name":[{"@value":"T. Kageyama"}]},{"@id":"https://cir.nii.ac.jp/crid/1384233268982268930","@type":"Researcher","foaf:name":[{"@value":"S. Takeoka"}]},{"@id":"https://cir.nii.ac.jp/crid/1384233268982268929","@type":"Researcher","foaf:name":[{"@value":"M. Fujii"}]},{"@id":"https://cir.nii.ac.jp/crid/1384233268982268933","@type":"Researcher","foaf:name":[{"@value":"S. Hayashi"}]},{"@id":"https://cir.nii.ac.jp/crid/1384233268982268932","@type":"Researcher","foaf:name":[{"@value":"K. Yamamoto"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00381098"}],"prism:publicationName":[{"@value":"Solid State Communications"}],"dc:publisher":[{"@value":"Elsevier BV"}],"prism:publicationDate":"1997-05","prism:volume":"102","prism:number":"7","prism:startingPage":"533","prism:endingPage":"537"},"reviewed":"false","dc:rights":["https://www.elsevier.com/tdm/userlicense/1.0/"],"url":[{"@id":"https://api.elsevier.com/content/article/PII:S0038109896007740?httpAccept=text/xml"},{"@id":"https://api.elsevier.com/content/article/PII:S0038109896007740?httpAccept=text/plain"}],"createdAt":"2002-07-25","modifiedAt":"2019-04-27","relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360004232287708032","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Photoluminescence from single silicon quantum dots excited via surface plasmon polaritons"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004233589667456","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Size-controlled growth of cubic boron phosphide nanocrystals"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004233591367808","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Colloidal hydrophilic silicon germanium alloy nanocrystals with a high boron and phosphorus concentration shell"}]},{"@id":"https://cir.nii.ac.jp/crid/1360004237436894464","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Sensitized broadband near-infrared luminescence from bismuth-doped silicon-rich silica films"}]},{"@id":"https://cir.nii.ac.jp/crid/1360285708112833792","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Energy Transfer in Silicon Nanocrystal Solids Made from All-Inorganic Colloidal Silicon Nanocrystals"}]},{"@id":"https://cir.nii.ac.jp/crid/1360567184372974080","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"All-inorganic colloidal silicon nanocrystals—surface modification by boron and phosphorus co-doping"}]},{"@id":"https://cir.nii.ac.jp/crid/1360846641602743680","@type":"Article","resourceType":"学術雑誌論文(journal article)","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Codoping n- and p-Type Impurities in Colloidal Silicon Nanocrystals: Controlling Luminescence Energy from below Bulk Band Gap to Visible Range"}]},{"@id":"https://cir.nii.ac.jp/crid/1520009408644445952","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Nanocrystalline silicon embedded in SiO films by RF magnetron sputtering"},{"@language":"ja-Kana","@value":"Nanocrystalline silicon embedded in SiO films by RF magnetron sputtering"}]},{"@id":"https://cir.nii.ac.jp/crid/1520853832724456448","@type":"Article","relationType":["isReferencedBy"],"jpcoar:relatedTitle":[{"@value":"Enhancement of Radiative Recombination Rate of Excitons in Si Nanocrystals on Au Film"},{"@language":"ja-Kana","@value":"Enhancement of Radiative Recombination Rate of Excitons in Si Nanocrystals on Au Film"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1016/s0038-1098(96)00774-0"},{"@type":"OPENAIRE","@value":"doi_dedup___::4ae30d0aa857724aea5c17c0f85248f9"},{"@type":"CROSSREF","@value":"10.1039/c4ra13530j_references_DOI_AuGTwcIo1fNmV4Eoh2bdJyFYkUJ"},{"@type":"CROSSREF","@value":"10.1039/c4tc00511b_references_DOI_AuGTwcIo1fNmV4Eoh2bdJyFYkUJ"},{"@type":"CROSSREF","@value":"10.1364/ol.36.004221_references_DOI_AuGTwcIo1fNmV4Eoh2bdJyFYkUJ"},{"@type":"CROSSREF","@value":"10.1143/jjap.45.6132_references_DOI_AuGTwcIo1fNmV4Eoh2bdJyFYkUJ"},{"@type":"CROSSREF","@value":"10.1021/jp4027767_references_DOI_AuGTwcIo1fNmV4Eoh2bdJyFYkUJ"},{"@type":"CROSSREF","@value":"10.1088/0957-4484/27/26/262001_references_DOI_AuGTwcIo1fNmV4Eoh2bdJyFYkUJ"},{"@type":"CROSSREF","@value":"10.1016/j.jlumin.2011.12.006_references_DOI_AuGTwcIo1fNmV4Eoh2bdJyFYkUJ"},{"@type":"CROSSREF","@value":"10.1143/jjap.47.3766_references_DOI_AuGTwcIo1fNmV4Eoh2bdJyFYkUJ"},{"@type":"CROSSREF","@value":"10.1021/acs.jpclett.5b01067_references_DOI_AuGTwcIo1fNmV4Eoh2bdJyFYkUJ"}]}