著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
J. van de Ven and H. G. Schoot and L. J. Giling,Influence of growth parameters on the incorporation of residual impurities in GaAs grown by metalorganic chemical vapor deposition,Journal of Applied Physics,0021-8979,AIP Publishing,1986-09-01,60,5,1648-1660,https://cir.nii.ac.jp/crid/1364233269753322496,https://doi.org/10.1063/1.337254