Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
M. Bassler and Valeri V. Afanas'ev and Gerhard Pensl and M. Schulz,Electrically Active Traps at the 4H-SiC/SiO<sub>2</sub> Interface Responsible for the Limitation of the Channel Mobility,Materials Science Forum,1662-9752,"Trans Tech Publications, Ltd.",2000-05-10,338-342,,1065-1068,https://cir.nii.ac.jp/crid/1364233271263201280,https://doi.org/10.4028/www.scientific.net/msf.338-342.1065