Author,Title,Journal,ISSN,Publisher,Date,Volume,Number,Page,URL,URL(DOI)
Barral,Strained FDSOI CMOS technology scalability down to 2.5 nm film thickness and 18 nm gate length with a TiN/HfO2 gate stack,,,,2007,,,61,https://cir.nii.ac.jp/crid/1370285712392136069,