{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1383670320579556480.json","@type":"Researcher","foaf:Person":[{"foaf:name":[{"@value":"J. D. Plummer"}],"foaf:familyName":[{"@value":"Plummer"}],"foaf:givenName":[{"@value":"J. D."}]}],"career":[{"institution":{"notation":[{"@value":"Integrated Circuits Laboratory, Stanford University, Stanford, California 94305"}]}}],"product":[{"@id":"https://cir.nii.ac.jp/crid/1363670320579556480","@type":"Article","productIdentifier":[{"@type":"DOI","@value":"10.1149/1.2129321"},{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1149/1.2129321"},{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1149/1.2129321/pdf"},{"@type":"NAID","@value":"30016165664"}],"notation":[{"@value":"Si / SiO2 Interface Oxidation Kinetics: A Physical Model for the Influence of High Substrate Doping Levels: II . Comparison with Experiment and Discussion"}],"relation":[{"type":"creator"}]}],"dataSourceIdentifier":[{"@type":"CROSSREF","@value":"10.1149/1.2129321_9UE9crHBbKtuq1U5JhHANrln8I6"}]}