Raman Scattering from Interface Phonons in GaInP/AlInP Superlattice.

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  • Ochiai Soichi
    Department of Physics, Faculty of Science and Technology, Sophia University, 7–1 Kioi–cho, Chiyoda–ku, Tokyo 102
  • Tanokura Yoshiko
    Department of Physics, Faculty of Science and Technology, Sophia University, 7–1 Kioi–cho, Chiyoda–ku, Tokyo 102
  • Sekine Tomoyuki
    Department of Physics, Faculty of Science and Technology, Sophia University, 7–1 Kioi–cho, Chiyoda–ku, Tokyo 102
  • Kikuchi Akihiko
    Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Sophia University, 7–1 Kioi–cho, Chiyoda–ku, Tokyo 102
  • Kaneko Yawara
    Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Sophia University, 7–1 Kioi–cho, Chiyoda–ku, Tokyo 102
  • Kishino Katsumi
    Department of Electrical and Electronic Engineering, Faculty of Science and Technology, Sophia University, 7–1 Kioi–cho, Chiyoda–ku, Tokyo 102

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  • Raman Scattering from Interface Phonons

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Measurements of Raman scattering were performed on ternary alloy superlattices GaInP/AlInP grown by gas-source molecular beam epitaxy. We observed interface phonons whose frequencies are explained in terms of an electrostatic continuum model using the optical phonons of AlInP and GaInP bulk alloys. The Raman intensities of the interface phonons are enhanced when the incident photon energy is close to the exciton energy in the GaInP quantum wells and to the band gap energy in the AlInP. We measured Raman spectra of AlGaInP quaternary alloy, which have the same composition on a standpoint of average crystal structure, and compare it with the spectra of the superlattice.

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