{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390001204595995136.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.11470/oubutsu1932.69.1233"}},{"identifier":{"@type":"COI","@value":"1:CAS:528:DC%2BD3cXnsVansLc%3D"}},{"identifier":{"@type":"NAID","@value":"130003594069"}}],"dc:title":[{"@language":"en","@value":"Semiconductor memory; DRAM"},{"@language":"ja","@value":"半導体メモリー; DRAM"}],"description":[{"type":"abstract","notation":[{"@language":"ja","@value":"DRAMは高集積LS1の代表であり,最先端の微細加工技術をけん引してきたLSIである.現在,製品の主流は64Mbitであるが, 256 Mbitも製品化され,さらには, 512Mbit, 1Gbitも開発されている.本講座では,メモリー動作の基本,メモリーセル構造の変化とキャパシター絶縁膜の薄膜化,微細化を支えたプロセス技術,ロRAM特有の課題である情報保持特性,システムLSIに向けた混載DRAMの技術的な課題などにふれる.デバイスと材料に向けられた努力に焦点を当てながら,高集積化の歩みを振り返る."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410001204595995136","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000253327339"}],"foaf:name":[{"@language":"en","@value":"KIMURA Shin'ichiro"},{"@language":"ja","@value":"木村 紳一郎"}],"jpcoar:affiliationName":[{"@language":"en","@value":"ULSI Research Department, Central Research Laboratory, Hitachi Ltd."},{"@language":"ja","@value":"日立製作所中央研究所ULSI研究部"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"03698009"},{"@type":"EISSN","@value":"21882290"}],"prism:publicationName":[{"@language":"en","@value":"Oyo Buturi"},{"@language":"ja","@value":"応用物理"},{"@language":"en","@value":"OYOBUTURI"},{"@language":"ja","@value":"応用物理"}],"dc:publisher":[{"@language":"en","@value":"The Japan Society of Applied Physics"},{"@language":"ja","@value":"公益社団法人 応用物理学会"}],"prism:publicationDate":"2000","prism:volume":"69","prism:number":"10","prism:startingPage":"1233","prism:endingPage":"1240"},"availableAt":"2000","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=DRAM","dc:title":"DRAM"},{"@id":"https://cir.nii.ac.jp/all?q=LSI","dc:title":"LSI"},{"@id":"https://cir.nii.ac.jp/all?q=memory%20cell","dc:title":"memory cell"},{"@id":"https://cir.nii.ac.jp/all?q=capacitor","dc:title":"capacitor"},{"@id":"https://cir.nii.ac.jp/all?q=stacked%20capacitor%20cell","dc:title":"stacked capacitor cell"},{"@id":"https://cir.nii.ac.jp/all?q=trench%20capacitor%20cell","dc:title":"trench capacitor cell"},{"@id":"https://cir.nii.ac.jp/all?q=COB%20(Capacitor%20Over%20Bitline)","dc:title":"COB (Capacitor Over Bitline)"},{"@id":"https://cir.nii.ac.jp/all?q=capacitor%20dielectric%20film","dc:title":"capacitor dielectric film"},{"@id":"https://cir.nii.ac.jp/all?q=Ta205","dc:title":"Ta205"},{"@id":"https://cir.nii.ac.jp/all?q=BST","dc:title":"BST"},{"@id":"https://cir.nii.ac.jp/all?q=word-line","dc:title":"word-line"},{"@id":"https://cir.nii.ac.jp/all?q=bit-line","dc:title":"bit-line"},{"@id":"https://cir.nii.ac.jp/all?q=sense%20amplifier","dc:title":"sense amplifier"},{"@id":"https://cir.nii.ac.jp/all?q=memory%20array","dc:title":"memory array"},{"@id":"https://cir.nii.ac.jp/all?q=peripheral%20circuit","dc:title":"peripheral circuit"},{"@id":"https://cir.nii.ac.jp/all?q=refresh","dc:title":"refresh"},{"@id":"https://cir.nii.ac.jp/all?q=embedded%20DRAM","dc:title":"embedded DRAM"},{"@id":"https://cir.nii.ac.jp/all?q=system%20LS","dc:title":"system LS"}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:0006904388"},{"@type":"CIA","@value":"130003594069"}]}