{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390001205657330176.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.11522/pscjspe.2014a.0_399"}},{"identifier":{"@type":"NAID","@value":"130005479408"}}],"dc:title":[{"@language":"ja","@value":"液中プラズマCVD法によるダイヤモンド膜の形成"},{"@language":"en","@value":"Synthesis of diamond film by in-liquid plasma CVD"}],"dc:language":"ja","description":[{"type":"abstract","notation":[{"@language":"en","@value":"The purpose of this study is to synthesize the diamond to various substrates using an in-liquid plasma chemical vapor deposition (CVD) method. We chose the copper and diamond substrate to form a film. Diamond films were evaluated using a Raman spectroscopy and a Scanning Electron Microscope (SEM), respectively. As a result, it was possible to synthesize a polycrystalline diamond thin film on copper substrate. However, film delamination has occurred after the experiment by internal stress. The film delamination is caused by the thermal stress due to the different linear expansion coefficient between the Cu substrate and the diamond film. In epitaxial growth on the diamond single crystal substrate, the best orientation for epitaxial growth is found to be (100). Diamond film grown on diamond (100) substrate was smooth in surface roughness. It is also found that diamond polycrystalline film with irregularity is synthesized when the film is synthesized on diamond (111) substrate. The deposition rate is about 32 micrometers per hour when both single-crystal and polycrystalline diamond films are synthesized."},{"@language":"ja","@value":"本研究の目的は種々の基板上に，液中プラズマCVD法を用いてダイヤモンド膜を形成することである。本報告では，基板として，銅およびダイヤモンドを用いている。銅基板上には，多結晶ダイヤモンド膜が形成されたが，銅とダイヤモンドの熱膨張係数の差が大きく，剥離が発生した。ダイヤモンド単結晶基板上では， (100)基板上には，エピタキシャル成長し，(111)基板上には，多結晶ダイヤモンド膜が形成された。膜生成速度は32μm/hであった。"}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1420564276180331136","@type":"Researcher","personIdentifier":[{"@type":"KAKEN_RESEARCHERS","@value":"00217572"},{"@type":"NRID","@value":"1000000217572"},{"@type":"NRID","@value":"9000002956141"},{"@type":"NRID","@value":"9000293833021"},{"@type":"NRID","@value":"9000401725940"},{"@type":"NRID","@value":"9000025087001"},{"@type":"NRID","@value":"9000006089518"},{"@type":"NRID","@value":"9000107363845"},{"@type":"NRID","@value":"9000254764849"},{"@type":"NRID","@value":"9000409999057"},{"@type":"NRID","@value":"9000409999151"},{"@type":"NRID","@value":"9000304306703"},{"@type":"NRID","@value":"9000254278904"},{"@type":"NRID","@value":"9000254280303"},{"@type":"NRID","@value":"9000305610359"},{"@type":"NRID","@value":"9000293832326"},{"@type":"NRID","@value":"9000298258492"},{"@type":"NRID","@value":"9000369741207"},{"@type":"NRID","@value":"9000254766310"},{"@type":"NRID","@value":"9000258172968"},{"@type":"NRID","@value":"9000242653083"},{"@type":"NRID","@value":"9000293833026"},{"@type":"NRID","@value":"9000254773962"},{"@type":"NRID","@value":"9000402049989"},{"@type":"NRID","@value":"9000025036790"},{"@type":"NRID","@value":"9000305611000"},{"@type":"NRID","@value":"9000293832330"},{"@type":"NRID","@value":"9000253675308"},{"@type":"NRID","@value":"9000401570809"},{"@type":"NRID","@value":"9000397685279"},{"@type":"NRID","@value":"9000025119782"},{"@type":"NRID","@value":"9000293833018"},{"@type":"NRID","@value":"9000293833013"},{"@type":"NRID","@value":"9000401738378"},{"@type":"NRID","@value":"9000273024650"},{"@type":"NRID","@value":"9000305610364"},{"@type":"NRID","@value":"9000402037621"},{"@type":"NRID","@value":"9000405121378"},{"@type":"NRID","@value":"9000242784644"},{"@type":"NRID","@value":"9000347296153"},{"@type":"NRID","@value":"9000401564524"},{"@type":"NRID","@value":"9000397684404"},{"@type":"NRID","@value":"9000258183108"},{"@type":"NRID","@value":"9000298258476"},{"@type":"NRID","@value":"9000254765656"},{"@type":"NRID","@value":"9000305615541"},{"@type":"NRID","@value":"9000367423284"},{"@type":"NRID","@value":"9000059327829"},{"@type":"NRID","@value":"9000345306515"},{"@type":"RESEARCHMAP","@value":"https://researchmap.jp/hiromichitoyota"}],"foaf:name":[{"@language":"ja","@value":"豊田 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信福"},{"@language":"en","@value":"Nomura Shinfuku"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Ehime University"},{"@language":"ja","@value":"愛媛大　大学院　理工学研究科"}]},{"@id":"https://cir.nii.ac.jp/crid/1420564276171506816","@type":"Researcher","personIdentifier":[{"@type":"KAKEN_RESEARCHERS","@value":"20284391"},{"@type":"NRID","@value":"1000020284391"},{"@type":"NRID","@value":"9000003790002"},{"@type":"NRID","@value":"9000401725938"},{"@type":"NRID","@value":"9000392393040"},{"@type":"NRID","@value":"9000025086999"},{"@type":"NRID","@value":"9000107343586"},{"@type":"NRID","@value":"9000398256413"},{"@type":"NRID","@value":"9000107363843"},{"@type":"NRID","@value":"9000003814172"},{"@type":"NRID","@value":"9000006401802"},{"@type":"NRID","@value":"9000369741206"},{"@type":"NRID","@value":"9000258172966"},{"@type":"NRID","@value":"9000402049988"},{"@type":"NRID","@value":"9000401809569"},{"@type":"NRID","@value":"9000392270911"},{"@type":"NRID","@value":"9000054225456"},{"@type":"NRID","@value":"9000401570807"},{"@type":"NRID","@value":"9000392393059"},{"@type":"NRID","@value":"9000003811040"},{"@type":"NRID","@value":"9000402010428"},{"@type":"NRID","@value":"9000397685278"},{"@type":"NRID","@value":"9000046639771"},{"@type":"NRID","@value":"9000401738377"},{"@type":"NRID","@value":"9000404826193"},{"@type":"NRID","@value":"9000273024649"},{"@type":"NRID","@value":"9000402037620"},{"@type":"NRID","@value":"9000412530951"},{"@type":"NRID","@value":"9000242784642"},{"@type":"NRID","@value":"9000347296152"},{"@type":"NRID","@value":"9000401564525"},{"@type":"NRID","@value":"9000392393063"},{"@type":"NRID","@value":"9000397684400"},{"@type":"NRID","@value":"9000258183107"},{"@type":"NRID","@value":"9000367423280"},{"@type":"NRID","@value":"9000025118652"},{"@type":"NRID","@value":"9000345306514"},{"@type":"NRID","@value":"9000347177412"},{"@type":"RESEARCHMAP","@value":"https://researchmap.jp/read0046965"}],"foaf:name":[{"@language":"ja","@value":"向笠 忍"},{"@language":"en","@value":"Mukasa Shinobu"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Ehime University"},{"@language":"ja","@value":"愛媛大　大学院　理工学研究科"}]}],"publication":{"prism:publicationName":[{"@language":"en","@value":"Proceedings of JSPE Semestrial Meeting"},{"@language":"ja","@value":"精密工学会学術講演会講演論文集"},{"@language":"en","@value":"Proceedings of JSPE Semestrial Meeting"},{"@language":"ja","@value":"精密工学会学術講演会講演論文集"}],"dc:publisher":[{"@language":"en","@value":"The Japan Society for Precision Engineering"},{"@language":"ja","@value":"公益社団法人 精密工学会"}],"prism:publicationDate":"2014","prism:volume":"2014A","prism:number":"0","prism:startingPage":"399","prism:endingPage":"400"},"availableAt":"2014","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=%E3%83%80%E3%82%A4%E3%83%A4%E3%83%A2%E3%83%B3%E3%83%89","dc:title":"ダイヤモンド"},{"@id":"https://cir.nii.ac.jp/all?q=%E3%83%97%E3%83%A9%E3%82%BA%E3%83%9E","dc:title":"プラズマ"},{"@id":"https://cir.nii.ac.jp/all?q=CVD","dc:title":"CVD"},{"@id":"https://cir.nii.ac.jp/all?q=%E6%B6%B2%E4%B8%AD%E5%90%88%E6%88%90","dc:title":"液中合成"},{"@id":"https://cir.nii.ac.jp/all?q=diamond","dc:title":"diamond"},{"@id":"https://cir.nii.ac.jp/all?q=plasma","dc:title":"plasma"},{"@id":"https://cir.nii.ac.jp/all?q=CVD","dc:title":"CVD"},{"@id":"https://cir.nii.ac.jp/all?q=in-liquid%20synthesis","dc:title":"in-liquid synthesis"}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:2001940278"},{"@type":"CIA","@value":"130005479408"}]}