Photoluminescence of Erbium Implanted in SiGe.

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  • Chang Shoou–Jinn
    Department of Electrical Engineering, National Cheng Kung University, Tainan, Taiwan, ROC
  • Nayak Deepak K.
    Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan
  • Shiraki Yasuhiro
    Research Center for Advanced Science and Technology, University of Tokyo, Tokyo, Japan

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説明

The optical properties of an Er-implanted SiGe sample have been studied. Sharp and temperature-stable Er-related photoluminescence (PL) peaks were observed at around 1.5 µ m, which correspond to the Er 4I13/2 to 4I15/2 transition. It was found that the Er ions form more than three noncubic luminescence centers in the SiGe host. Although the PL intensity quenches at high temperatures, the Er-related PL signal can still be observed at room temperature. For a Si0.87Ge0.13:Er sample annealed at 850° C for 20 min, the activation energy is 130 meV which is slightly smaller than that of the Er-doped Si.

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