{"@context":{"@vocab":"https://cir.nii.ac.jp/schema/1.0/","rdfs":"http://www.w3.org/2000/01/rdf-schema#","dc":"http://purl.org/dc/elements/1.1/","dcterms":"http://purl.org/dc/terms/","foaf":"http://xmlns.com/foaf/0.1/","prism":"http://prismstandard.org/namespaces/basic/2.0/","cinii":"http://ci.nii.ac.jp/ns/1.0/","datacite":"https://schema.datacite.org/meta/kernel-4/","ndl":"http://ndl.go.jp/dcndl/terms/","jpcoar":"https://github.com/JPCOAR/schema/blob/master/2.0/"},"@id":"https://cir.nii.ac.jp/crid/1390001206249246848.json","@type":"Article","productIdentifier":[{"identifier":{"@type":"DOI","@value":"10.1143/jjap.37.1129"}},{"identifier":{"@type":"NDL_BIB_ID","@value":"4473563"}},{"identifier":{"@type":"URI","@value":"http://id.ndl.go.jp/bib/4473563"}},{"identifier":{"@type":"URI","@value":"https://ndlsearch.ndl.go.jp/books/R000000004-I4473563"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.37.1129"}},{"identifier":{"@type":"URI","@value":"https://iopscience.iop.org/article/10.1143/JJAP.37.1129/pdf"}},{"identifier":{"@type":"NAID","@value":"110003906378"}},{"identifier":{"@type":"NAID","@value":"210000042770"}},{"identifier":{"@type":"NAID","@value":"130004524778"}}],"dc:title":[{"@language":"en","@value":"Electron Beam Induced Damage of MOS Gate Oxide."},{"@language":"ja-Kana","@value":"Electron Beam Induced Damage of MOS Gat"}],"dc:language":"en","description":[{"type":"abstract","notation":[{"@language":"en","@value":"Threshold voltage (V<SUB>th</SUB>) shift of a metal oxide semiconductor (MOS) system due to electron beam (EB) exposure can be expressed quantitatively as a function of the EB dosage which was derived easily as a solution of a differential equation based on the hole capturing model in the gate oxide. The theoretical model assumes two steps for hole capturing. First is the hole capturing by intrinsic hole traps leading to steep V<SUB>th</SUB> shift with EB dosage at early exposure stages. The second is the hole capturing by newborn hole traps due to the EB injection, leading to a rather slow V<SUB>th</SUB> variation at a higher EB dosage. The model shows good agreement with the experimental result over a wide range of electron beam dosages. Moreover, hole injection efficiency in the gate oxide is found to be higher for the third Aluminum interconnection layer exposure than for the first Al layer, corresponding to higher deposition energy around the gate oxide obtained by the Monte Carlo simulation result."}],"abstractLicenseFlag":"disallow"}],"creator":[{"@id":"https://cir.nii.ac.jp/crid/1410001206249246849","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401670596"},{"@type":"NRID","@value":"9000258140746"}],"foaf:name":[{"@language":"en","@value":"Konishi Morikazu"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Basic Process Technology Department, Advanced Devices Department, ULSI R&D Labs., Semiconductor Co., Sony Corp. 4–14–1 Atsugi–shi, Kanagawa 243, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1410001206249246850","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401670597"},{"@type":"NRID","@value":"9000258140747"}],"foaf:name":[{"@language":"en","@value":"Kubota Michitaka"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Basic Process Technology Department, Advanced Devices Department, ULSI R&D Labs., Semiconductor Co., Sony Corp. 4–14–1 Atsugi–shi, Kanagawa 243, Japan"}]},{"@id":"https://cir.nii.ac.jp/crid/1410001206249246848","@type":"Researcher","personIdentifier":[{"@type":"NRID","@value":"9000401670598"},{"@type":"NRID","@value":"9000258140748"}],"foaf:name":[{"@language":"en","@value":"Koike Kaoru"}],"jpcoar:affiliationName":[{"@language":"en","@value":"Basic Process Technology Department, Advanced Devices Department, ULSI R&D Labs., Semiconductor Co., Sony Corp. 4–14–1 Atsugi–shi, Kanagawa 243, Japan"}]}],"publication":{"publicationIdentifier":[{"@type":"PISSN","@value":"00214922"},{"@type":"EISSN","@value":"13474065"},{"@type":"NDL_BIB_ID","@value":"000000159719"},{"@type":"ISSN","@value":"00214922"},{"@type":"LISSN","@value":"00214922"},{"@type":"NCID","@value":"AA10457675"}],"prism:publicationName":[{"@language":"en","@value":"Japanese Journal of Applied Physics"},{"@language":"en","@value":"JPN. J. APPL. PHYS."},{"@language":"en","@value":"JJAP"}],"dc:publisher":[{"@language":"en","@value":"The Japan Society of Applied Physics"}],"prism:publicationDate":"1998","prism:volume":"37","prism:number":"3B","prism:startingPage":"1129","prism:endingPage":"1136"},"reviewed":"false","url":[{"@id":"http://id.ndl.go.jp/bib/4473563"},{"@id":"https://ndlsearch.ndl.go.jp/books/R000000004-I4473563"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.37.1129"},{"@id":"https://iopscience.iop.org/article/10.1143/JJAP.37.1129/pdf"}],"availableAt":"1998","foaf:topic":[{"@id":"https://cir.nii.ac.jp/all?q=MOS","dc:title":"MOS"},{"@id":"https://cir.nii.ac.jp/all?q=gate%20oxide","dc:title":"gate oxide"},{"@id":"https://cir.nii.ac.jp/all?q=electron%20beam%20damage","dc:title":"electron beam damage"},{"@id":"https://cir.nii.ac.jp/all?q=hole%20trap%20generation","dc:title":"hole trap generation"},{"@id":"https://cir.nii.ac.jp/all?q=threshold%20voltage%20shift","dc:title":"threshold voltage shift"},{"@id":"https://cir.nii.ac.jp/all?q=Monte%20Carlo%20simulation","dc:title":"Monte Carlo simulation"},{"@id":"https://cir.nii.ac.jp/all?q=deposition%20energy","dc:title":"deposition energy"}],"relatedProduct":[{"@id":"https://cir.nii.ac.jp/crid/1360016866481213568","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Neutral electron trap generation in SiO2 by hot holes"}]},{"@id":"https://cir.nii.ac.jp/crid/1360298340936809344","@type":"Article","relationType":["references","cites"],"jpcoar:relatedTitle":[{"@value":"Reduction of Electron‐Beam‐Induced Damage in MOS Devices Using Three‐Layer Resist with Heavy Metal Interlayer"}]},{"@id":"https://cir.nii.ac.jp/crid/1360861291266841472","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Application and evaluation of direct-write electron beam for ASICs"}]},{"@id":"https://cir.nii.ac.jp/crid/1360861293202786432","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Study on irradiation damage to semiconductor devices by 200-keV electrons caused by backscattered electron assisting LSI inspection (BEASTLI) method"}]},{"@id":"https://cir.nii.ac.jp/crid/1362544419155802624","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Electron−hole pair creation energy in SiO2"}]},{"@id":"https://cir.nii.ac.jp/crid/1363107369092632448","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Interface trap generation in silicon dioxide when electrons are captured by trapped holes"}]},{"@id":"https://cir.nii.ac.jp/crid/1364233270068987776","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@value":"Oxygen vacancy model for the E1′ center in SiO2"}]},{"@id":"https://cir.nii.ac.jp/crid/1390001206245077632","@type":"Article","relationType":["references"],"jpcoar:relatedTitle":[{"@language":"en","@value":"Effects of Electron Beam Damage on the Electrical Characteristics of n-type Metal-Oxide-Semiconductor Field-Effect-Transistors."}]},{"@id":"https://cir.nii.ac.jp/crid/1570291224271328640","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1570572699248043520","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571417124178174080","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571417124178175360","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571698599154883200","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1571698599154887296","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1572543024085017728","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1573668924030716032","@type":"Article","relationType":["cites"]},{"@id":"https://cir.nii.ac.jp/crid/1573950398968569088","@type":"Article","relationType":["cites"]}],"dataSourceIdentifier":[{"@type":"JALC","@value":"oai:japanlinkcenter.org:0005319480"},{"@type":"NDL_SEARCH","@value":"oai:ndlsearch.ndl.go.jp:R000000004-I4473563"},{"@type":"CROSSREF","@value":"10.1143/jjap.37.1129"},{"@type":"CIA","@value":"110003906378"},{"@type":"CIA","@value":"210000042770"},{"@type":"CIA","@value":"130004524778"}]}