著者名,論文名,雑誌名,ISSN,出版者名,出版日付,巻,号,ページ,URL,URL(DOI)
Matsumoto Satoshi and Hiraoka Yasushi and Sakai Tatsuo,A Highly-Efficient Tungsten-Polycide Gate Radio-Frequency Power Metal-Oxide-Semiconductor Field-Effect-Transistor Using Bonded Silicon-on-Insulator Technology.,Japanese Journal of Applied Physics,00214922,The Japan Society of Applied Physics,2001,40,3A,1162-1166,https://cir.nii.ac.jp/crid/1390001206253538304,https://doi.org/10.1143/jjap.40.1162