Copper Distribution near a SiO2/Si Interface under Low-Temperature Annealing.

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  • Hozawa Kazuyuki
    Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
  • Isomae Seiichi
    Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan
  • Yugami Jiro
    Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-Koigakubo, Kokubunji, Tokyo 185-8601, Japan

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  • Copper Distribution near a SiO<sub>2</sub>/Si Interface under Low-Temperature Annealing

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In relation to the thickness of a surface SiO2 film, the behavior of copper atoms existing at the SiO2/Si interface during low-temperature annealing (≤400°C) is investigated by an analytical method combining step-etching and multi-angle total reflection of X-ray fluorescence. It is shown that SiO2 thickness plays an important role in the re-distribution of copper. For a 2-nm-thick SiO2 film, copper diffused from the interface to the SiO2 surface. On the other hand, in a 5-nm-thick SiO2 film, copper diffused toward the bulk. This copper re-distribution behavior also affected the electrical characteristics, such as Dit and Vth, of the metal-oxide-semiconductor (MOS) capacitors. The degradation of oxide breakdown characteristics after 400°C annealing suggests that copper atoms move around in the SiO2 film before leaving the interface.

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